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Low On Resistance N Channel MOSFET Model HYG024N03LR1C2 Suitable for Battery Protection Circuits
Low On Resistance N Channel MOSFET Model HYG024N03LR1C2 Suitable for Battery Protection Circuits
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
140A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
2.3mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)) :
1V
Reverse Transfer Capacitance (Crss@Vds) :
458pF@25V
Number :
1 N-channel
Pd - Power Dissipation :
71.4W
Input Capacitance(Ciss) :
3.936nF
Gate Charge(Qg) :
88.1nC@10V
Description :
30V 140A 2.3mΩ@4.5V,30A 1V 1 N-channel 71.4W PDFN-8L(5x6) Single FETs, MOSFETs RoHS
Mfr. Part # :
HYG024N03LR1C2
Model Number :
HYG024N03LR1C2
Package :
PDFN-8L(5x6)
Description

Product Overview

The HYG024N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, ensuring RoHS compliance. This MOSFET is suitable for battery protection and power tool applications.

Product Attributes

  • Brand: Hymexa
  • Origin: China
  • Material: Lead-free (RoHS Compliant), Halogen-free
  • Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification

Technical Specifications

ModelFeatureParameterValueUnit
HYG024N03LR1C2Absolute Maximum RatingsDrain-Source Voltage (VDSS)30V
Gate-Source Voltage (VGSS)±20V
Maximum Junction Temperature (TJ)-55 to 175°C
Electrical CharacteristicsDrain-Source On-State Resistance (RDS(ON)) @ VGS=10V1.6 (typ.)mΩ
Drain-Source On-State Resistance (RDS(ON)) @ VGS=4.5V2.3 (typ.)mΩ
HYG024N03LR1Electrical CharacteristicsDrain-Source Breakdown Voltage (BVDSS)30V
Gate Threshold Voltage (VGS(th))1.0 - 3.0V
Diode Forward Voltage (VSD) @ ISD=30A- 0.78 - 1.3V

2411220138_HUAYI-HYG024N03LR1C2_C5121295.pdf

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Low On Resistance N Channel MOSFET Model HYG024N03LR1C2 Suitable for Battery Protection Circuits

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
140A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
2.3mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)) :
1V
Reverse Transfer Capacitance (Crss@Vds) :
458pF@25V
Contact Supplier
Low On Resistance N Channel MOSFET Model HYG024N03LR1C2 Suitable for Battery Protection Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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