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power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with advanced trench DMOS technology
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with advanced trench DMOS technology
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
100A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
505pF
Input Capacitance(Ciss) :
7.93nF@25V
Pd - Power Dissipation :
138W
Gate Charge(Qg) :
146nC
Description :
P-Channel 30V 100A 138W Surface Mount PDFN5x6-8
Mfr. Part # :
MSH30P100
Model Number :
MSH30P100
Package :
PDFN5x6-8
Description

Product Overview

The MSH30P100 is a P-Channel 30-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. The device is designed for applications requiring efficient power management, including motor drivers, POL applications, load switches, and LED drivers.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Technology: Trench DMOS
  • Certifications: RoHS Compliant, Green Device Available
  • Key Feature: 100% EAS Guaranteed
  • Package Type: PDFN 5X6
  • Packing: 3,000/Reel

Technical Specifications

MSH30P100 P-Channel 30-V (D-S) MOSFET
Symbol Parameter Test Conditions Value Units
Features
RDS(ON) Static Drain-Source On-Resistance VGS =-10V, ID =-30A 3.3 m
RDS(ON) Static Drain-Source On-Resistance VGS =-4.5V, ID =-20A 5.0 m
Fast switching
Suit for -4.5V Gate Drive Applications
EAS 100% EAS Guaranteed
Typical Applications
Motor Driver Applications
POL Applications
Load Switch
LED Applications
Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 20 V
ID Continuous Drain Current (TC =25C) -100 A
ID Continuous Drain Current (TC =100C) -63.2 A
IDM Pulsed Drain Current (Pulse width 300s, duty cycle 2%) -400 A
IAS Single Pulse Avalanche Current (L =0.1mH) -80 A
EAS Single Pulse Avalanche Energy (L =0.1mH) 320 mJ
PD Power Dissipation (TC =25C) 138 W
PD Power Dissipation (TA =25C) 2 W
TJ/TSTG Operating Junction and Storage Temperature -55 to +150 C
Thermal Resistance Ratings
RJA Maximum Junction-to-Ambient (Tested on 1 inch FR-4 board with 2OZ copper) 62.5 C/W
RJC Maximum Junction-to-Case (Tested on 1 inch FR-4 board with 2OZ copper) 0.9 C/W
Electrical Characteristics (TJ=25C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =-250A -1.2 to -2.2 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =-250A -30 V
gfs Forward Transconductance VDS =-10V, ID =-3A 20 S
IGSS Gate-Source Leakage Current VDS =0V, VGS =20V 100 nA
IDSS Drain-Source Leakage Current VDS =-30V, VGS =0V, TJ =25C -1 A
IDSS Drain-Source Leakage Current VDS =-24V, VGS =0V, TJ =125C -10 A
RDS (on) Static Drain-Source On-Resistance VGS =-10V, ID =-30A 2.7 to 3.3 m
RDS (on) Static Drain-Source On-Resistance VGS =-4.5V, ID =-20A 4.0 to 5.0 m
EAS Single Pulse Avalanche Energy VDD =-25V, L =0.1mH, IAS =-30A 45 mJ
VSD Diode Forward Voltage IS =-30A, VGS =0V, TJ =25C -1.2 V
IS Continuous Source Current -100 A
ISM Pulsed Source Current VG =VD =0V, Force Current -200 A
Dynamic Characteristics
Qg Total Gate Charge VDS =-24V, ID =-10A, VGS =-10V 146 nC
Qgs Gate-Source Charge VDS =-24V, ID =-10A, VGS =-10V 22 nC
Qgd Gate-Drain Charge VDS =-24V, ID =-10A, VGS =-10V 32 nC
td(on) Turn-On Delay Time VDS =-15V, ID =-10A, VGS =-10V, RG =5 17 ns
tr Rise Time VDS =-15V, ID =-10A, VGS =-10V, RG =5 61 ns
td(off) Turn-Off Delay Time VDS =-15V, ID =-10A, VGS =-10V, RG =5 200 ns
tf Fall Time VDS =-15V, ID =-10A, VGS =-10V, RG =5 113 ns
CISS Input Capacitance VDS =-25V, VGS =0V, f =1.0MHz 7930 pF
COSS Output Capacitance VDS =-25V, VGS =0V, f =1.0MHz 983 pF
CRSS Reverse Transfer Capacitance VDS =-25V, VGS =0V, f =1.0MHz 505 pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz 3.6

2410121453_Bruckewell-MSH30P100_C22465586.pdf

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power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with advanced trench DMOS technology

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
100A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Type :
P-Channel
Contact Supplier
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with advanced trench DMOS technology

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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