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N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability
N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability
Specifications
Drain to Source Voltage :
40V
Current - Continuous Drain(Id) :
230A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
222pF
Number :
1 N-channel
Output Capacitance(Coss) :
2.119nF
Input Capacitance(Ciss) :
6.81nF
Pd - Power Dissipation :
90W
Gate Charge(Qg) :
128nC@10V
Description :
N-Channel 40V 230A 90W PRPAK5x6-8L
Mfr. Part # :
HSBA4086
Model Number :
HSBA4086
Package :
PRPAK5x6-8L
Description

Product Overview

The HSBA4086 is a high-performance N-Channel 40V Fast Switching MOSFET designed for demanding applications. Featuring advanced trench technology, it offers low gate charge, high current capability, and fast switching characteristics. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS) for synchronous rectification, DC/DC converters, and Or-ing applications. It is RoHS and Halogen-Free compliant.

Product Attributes

  • Brand: HS-Semi
  • Type: N-Channel MOSFET
  • Voltage Rating: 40V
  • Switching Speed: Fast
  • Compliance: RoHS and Halogen-Free
  • Technology: Advanced Trench Technology

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSBA4086 Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 40 --- --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V , ID=20A --- 0.8 1.2 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=20A --- 1.2 2.0 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 1.2 1.7 2.2 V
Drain-Source Leakage Current (IDSS) VDS=32V , VGS=0V , TJ=25 --- --- 1 uA
Drain-Source Leakage Current (IDSS) VDS=32V , VGS=0V , TJ=55 --- --- 5 uA
Gate-Source Leakage Current (IGSS) VGS=20V , VDS=0V --- --- 100 nA
Gate Resistance (Rg) VDS=0V , VGS=0V , f=1MHz --- 1.3 ---
Total Gate Charge (Qg) VDS=20V , VGS=10V , ID=20A --- 128 --- nC
Total Gate Charge (Qg) VGS=4.5V --- 67 --- nC
Gate-Source Charge (Qgs) VDS=20V , VGS=10V , ID=20A --- 17 --- nC
Gate-Drain Charge (Qgd) VDS=20V , VGS=10V , ID=20A --- 29 --- nC
Absolute Maximum Ratings Drain-Source Voltage (VDS) --- --- --- 40 V
Gate-Source Voltage (VGS) --- --- --- 20 V
Continuous Drain Current (ID@TC=25) VGS @ 10V --- --- 230 A
Continuous Drain Current (ID@TC=100) VGS @ 10V --- --- 140 A
Thermal Data Thermal Resistance Junction-Ambient (RJA) --- --- --- 63 /W
Thermal Resistance Junction-Case (RJC) --- --- --- 1.4 /W
Total Power Dissipation (PD@TC=25) --- --- --- 90 W
Storage Temperature Range (TSTG) --- -55 --- 150

2410121653_HUASHUO-HSBA4086_C2987714.pdf
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N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability

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Product Detail
Drain to Source Voltage :
40V
Current - Continuous Drain(Id) :
230A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Type :
N-Channel
Contact Supplier
N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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