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Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications
Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications
Specifications
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
160A
RDS(on) :
3.3mΩ@10V
Operating Temperature - :
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)) :
3V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
10.2pF
Number :
1 N-channel
Input Capacitance(Ciss) :
3.915nF
Pd - Power Dissipation :
125W
Gate Charge(Qg) :
58.3nC
Description :
N-Channel 60V 160A 125W Surface Mount TO-252-2L
Mfr. Part # :
HYG025N06LS1D
Model Number :
HYG025N06LS1D
Package :
TO-252-2L
Description

Product Overview

The HYG025N06LS1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON) = 2.6 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available. This MOSFET is suitable for high frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems.

Product Attributes

  • Brand: HYG
  • Model: HYG025N06LS1D
  • Package Type: TO-252-2L
  • Certifications: RoHS Compliant, Halogen-Free Devices Available
  • Material: Lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)
  • Origin: China (Huayi Microelectronics Co., Ltd.)

Technical Specifications

ParameterSymbolTest ConditionsUnitMinTyp.Max
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise NotedV60
Gate-Source VoltageVGSSV20
Maximum Junction TemperatureTJC175
Storage Temperature RangeTSTGC-55175
Source Current-Continuous (Body Diode)ISTc=25C, Mounted on Large Heat SinkA160
Pulsed Drain CurrentIDMTc=25CA620
Continuous Drain CurrentIDTc=25CA160
Continuous Drain CurrentIDTc=100CA113
Maximum Power DissipationPDTc=25CW125
Maximum Power DissipationPDTc=100CW62.5
Thermal Resistance, Junction-to-CaseRJCC/W1.2
Thermal Resistance, Junction-to-AmbientRJASurface mounted on FR-4 board.C/W110
Single-Pulsed-Avalanche EnergyEASL=0.3mHmJ301.8
Static Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250AV60
Drain-to-Source Leakage CurrentIDSSVDS=60V,VGS=0VA1
Drain-to-Source Leakage CurrentIDSSTJ=100CA50
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250AV1.02.13.0
Gate-Source Leakage CurrentIGSSVGS=20V,VDS=0VnA100
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=40Am2.63.3
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=40Am3.84.7
Diode Characteristics
Diode Forward VoltageVSDISD=40A,VGS=0VV0.851.3
Reverse Recovery TimetrrISD=40A,dISD/dt=100A/sns41.1
Reverse Recovery ChargeQrrnC48.2
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz0.58
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHzpF3915
Output CapacitanceCosspF1310
Reverse Transfer CapacitanceCrsspF10.2
Turn-on Delay Timetd(ON)VDD=30V,RG=4, IDS=40A,VGS=10Vns15.3
Turn-on Rise TimeTrns34
Turn-off Delay Timetd(OFF)ns33
Turn-off Fall TimeTfns9.4
Gate Charge Characteristics
Total Gate ChargeQg10VVDS =48V, VGS=10V, ID=40AnC58.3
Total Gate ChargeQg4.5VnC27.7
Gate-Source ChargeQgsnC15.7
Gate-Drain ChargeQgdnC9.7

2409302203_HUAYI-HYG025N06LS1D_C2891600.pdf

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Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications

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Product Detail
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
160A
RDS(on) :
3.3mΩ@10V
Operating Temperature - :
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)) :
3V@250uA
Type :
N-Channel
Contact Supplier
Low On Resistance N Channel MOSFET HUAYI HYG025N06LS1D Suitable for High Frequency Power Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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