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ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
Specifications
Drain to Source Voltage :
1.2kV
Current - Continuous Drain(Id) :
35A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
100mΩ
Gate Threshold Voltage (Vgs(th)) :
4V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
4pF
Pd - Power Dissipation :
188W
Output Capacitance(Coss) :
62pF
Input Capacitance(Ciss) :
1.377nF
Gate Charge(Qg) :
58nC
Description :
1.2kV 35A 100mΩ 4V 188W TO-220 Single FETs, MOSFETs RoHS
Mfr. Part # :
ADP120N080G2
Model Number :
ADP120N080G2
Package :
TO-220
Description

Product Overview

This series of 1200V N-Channel Silicon Carbide Power MOSFETs, including models ADQ120N080G2, ADW120N080G2, ADG120N080G2, ADP120N080G2, and ADA120N080G2, offers low drain-source on-resistance (RDS(ON) = 80m typ.) and easy gate control with enhancement mode operation (Vth = 2 to 4 V). These devices are suitable for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters.

Product Attributes

  • Material: Silicon Carbide
  • Channel Type: N-Channel
  • Technology: Enhancement Mode

Technical Specifications

Part Name Package VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
ADQ120N080G2 TO-247-4L 1200 100 58 94
ADW120N080G2 TO-247-3L 1200 100 58 94
ADG120N080G2 TO-263-7L 1200 100 58 94
ADP120N080G2 TO-220 1200 100 58 94
ADA120N080G2 TO-220F 1200 100 58 94
Parameter Symbol Values (Unit) Note / Test Condition
Continuous drain current ID - - 35 A (TC=25C) / - - 26 A (TC=100C) Limited by Tj,max. Maximum Duty Cycle D = 0.50
Avalanche energy, single pulse EAS - - 200 mJ Tc=25,VDD=50V,L=1mH, RG=25
Gate source voltage (static) VGS -5 - 20 V static
Power dissipation Ptot - - 188 W (TC=25C) Derating factor above 25C - - 1.9 W/C
Storage temperature Tstg -55 - 175 C
Operating junction temperature Tj -55 - 175 C
Soldering Temperature TL 300 C Distance of 1.6mm from case for 10s
Transconductance GFS - 8.33 S (VDS=20V, IDS=20A) / 7.14 S (VDS=20V, IDS=20A, Tj=150C)
Drain-source breakdown voltage V(BR)DSS 1200 V VGS=0V, ID=1mA
Gate threshold voltage V(GS)th 2.0 2.8 4.0 V VDS=VGS, ID=10mA
Zero gate voltage drain current IDSS - - 1 uA VDS=1200V, VGS=0V
Gate-source leakage current IGSS+ - - 100 nA VGS=20V, VDS=0V
Gate-source leakage current IGSS- - - -100 nA VGS=-5V, VDS=0V
Drain-source on-state resistance RDS(on) - 80 100 m (VGS=20V, ID=20A, Tj=25C) / 93.1 m (VGS=20V, ID=20A, Tj=150C)
Gate resistance (Intrinsic) RG - 4.5 f=1MHz, open drain
Input capacitance Ciss - 1377 pF VGS=0V, VDS=1000V, f=200KHz
Output capacitance Coss - 62 pF VGS=0V, VDS=1000V, f=200KHz
Reverse transfer capacitance Crss - 4 pF VGS=0V, VDS=1000V, f=200KHz
Turn-on delay time td(on) - 10 ns VDD=800V, VGS=20V, ID=20A,RG=0; TJ =25
Rise time tr - 6 ns
Turn-off delay time td(off) - 16 ns
Fall time tf - 10 ns
Turn-on Switching Energy Eon 748.8 uJ
Turn-off Switching Energy Eoff 31.2 uJ
Gate to source charge Qgs - 18 nC VDD=800V, ID=20A, VGS=20V
Gate to drain charge Qg - 17 nC VDD=800V, ID=20A, VGS=20V
Gate charge total Qg - 58 nC VDD=800V, ID=20A, VGS=20V
Continuous Source Current ISD - - 35 A
Diode forward voltage VSD - 3.8 V IS=10A, VGS=0V, Tj=25C
Reverse recovery time trr - 57 ns VDD=800VID=20A, +VGS =+15V, -VGS=-4V dif/dt=1000A/s LLoad=500uHRg=0TJ =25
Reverse recovery charge Qrr - 195 nC
Peak reverse recovery current Irrm - 6.84 A
Package Thermal resistance, junction - case (RthJC) (C/W) Thermal resistance, junction - ambient (RthJA) (C/W)
TO247 & TO220 0.65 - 0.8 40 (device on PCB, minimal footprint)
TO263-7L - - 1.0 62 (device on PCB, minimal footprint)
TO220F - - 5 60 (device on PCB, minimal footprint)

2410121453_ANHI-ADP120N080G2_C22470090.pdf

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ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge

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Product Detail
Drain to Source Voltage :
1.2kV
Current - Continuous Drain(Id) :
35A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
100mΩ
Gate Threshold Voltage (Vgs(th)) :
4V
Type :
N-Channel
Contact Supplier
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source Resistance and Gate Charge

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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