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switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating
switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating
Specifications
Configuration :
-
Drain to Source Voltage :
200V
Current - Continuous Drain(Id) :
18A
Operating Temperature - :
-
RDS(on) :
180mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
-
Reverse Transfer Capacitance (Crss@Vds) :
120pF
Number :
1 N-channel
Output Capacitance(Coss) :
400pF
Input Capacitance(Ciss) :
1.3nF
Pd - Power Dissipation :
2W
Gate Charge(Qg) :
-
Description :
N-Channel 200V 18A 2W Through Hole TO-220-3L
Mfr. Part # :
IRF640
Model Number :
IRF640
Package :
TO-220-3L
Description

Product Overview

The IRF640 is a third-generation HEXFET MOSFET from International Rectifier, designed for cost-effectiveness and superior performance. It offers a combination of fast switching, ruggedized design, low on-resistance, and low thermal resistance, making it suitable for power dissipation levels up to approximately 50 watts. The TO-220-3L package is widely adopted in commercial and industrial applications.

Product Attributes

  • Brand: International Rectifier
  • Product Type: MOSFET (N-Channel)
  • Package: TO-220AB

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Continuous Drain CurrentIDVGS @ 10 V18A
Power DissipationPDW
Linear Derating Factor1.0W/
Gate-Source VoltageVGS20V
Single Pulse Avalanche EnergyEAS(note 1)580mJ
Thermal Resistance Junction to AmbientRJA62.5/W
Junction TemperatureTJ150
Storage TemperatureTSTG-55+150
Drain-source breakdown voltageV(BR)DSSVGS=0V,ID=250A200V
Gate-threshold voltageV(GS)thVDS=VGS, ID=250A24V
Gate-body leakagelGSSVDS=0V, VGS=20V100nA
Zero gate voltage drain currentIDSSVDS=200V, VGS=0V25A
Drain-source on-resistanceRDS(on)VGS=10V, ID=11A (note 2)0.18
Forward transconductancegfsVDS=50V, ID=11A (note 2)6.7S
Diode forward voltageVSDIS=18A, VGS=0V (note 2)2V
Input capacitanceCissVDS=25V, VGS=0V,f=1MHz (note 3)1300pF
Output capacitanceCossVDS=25V, VGS=0V,f=1MHz (note 3)400pF
Reverse transfer capacitanceCrssVDS=25V, VGS=0V,f=1MHz (note 3)120pF
Turn-on timetd(on)VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)14ns
Rise timetrVDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)51ns
Turn-off timetd(off)VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)45ns
Fall timetfVDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3)36ns

2410121928_GOODWORK-IRF640_C17702911.pdf

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switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating

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Product Detail
Configuration :
-
Drain to Source Voltage :
200V
Current - Continuous Drain(Id) :
18A
Operating Temperature - :
-
RDS(on) :
180mΩ@10V,11A
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Contact Supplier
switching MOSFET GOODWORK IRF640 with low thermal resistance and high continuous drain current rating

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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