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MOSFET ElecSuper BSS138Q 7 F ES N Channel type with advanced trench technology and UL 94V 0 certification
MOSFET ElecSuper BSS138Q 7 F ES N Channel type with advanced trench technology and UL 94V 0 certification
Specifications
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
400mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)) :
1V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
2.2pF
Number :
1 N-channel
Output Capacitance(Coss) :
9.7pF
Input Capacitance(Ciss) :
25pF
Pd - Power Dissipation :
417mW
Gate Charge(Qg) :
650pC@4.5V
Description :
N-Channel 60V 400mA 417mW Surface Mount SOT-23
Mfr. Part # :
BSS138Q-7-F-ES
Model Number :
BSS138Q-7-F-ES
Package :
SOT-23
Description

Product Overview

The BSS138Q-7-F-ES is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology and a high-density cell design for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering reliable and rugged performance with avalanche rating and low leakage current.

Product Attributes

  • Brand: ElecSuper
  • Product Code: BSS138Q-7-F-ES
  • Material: Halogen free
  • Color: Not specified
  • Certifications: UL 94V-0
  • Origin: Not specified
  • Pb-free: Yes

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=10mA60V
Zero Gate Voltage Drain CurrentIDSSVDS=60V, VGS=0V,TJ=251.0uA
VDS=40V, VGS=0V, TJ=125100
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=20V10uA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA0.81.01.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=0.4A1.51.9
VGS=4.5V, ID=0.2A1.62.5
VGS=2.5V, ID=0.1A2.734.5
Input CapacitanceCISSVGS=0V, f=1MHz, VDS =25V2550pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS =25V9.722pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS =25V2.25pF
Total Gate ChargeQG(TOT)VGS=4.5V, VDS=25V, ID=0.25A0.651nC
Gate-to-Source ChargeQGSVGS=4.5V, VDS=25V, ID=0.25A0.2nC
Gate-to-Drain ChargeQGDVGS=4.5V, VDS=25V, ID=0.25A0.23nC
Turn-On Delay Timetd(ON)VGS=10V, VDS=25V, ID=0.4A, RG=62.35ns
Rise TimetrVGS=10V, VDS=25V, ID=0.4A, RG=619.240ns
Turn-Off Delay Timetd(OFF)VGS=10V, VDS=25V, ID=0.4A, RG=66.312ns
Fall TimetfVGS=10V, VDS=25V, ID=0.4A, RG=62350ns
Forward VoltageVSDVGS=0V, IS=0.5A0.861.5V

2504101957_ElecSuper-BSS138Q-7-F-ES_C5224275.pdf

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MOSFET ElecSuper BSS138Q 7 F ES N Channel type with advanced trench technology and UL 94V 0 certification

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Product Detail
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
400mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)) :
1V@250uA
Type :
N-Channel
Contact Supplier
MOSFET ElecSuper BSS138Q 7 F ES N Channel type with advanced trench technology and UL 94V 0 certification

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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