Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
4.2A
RDS(on) :
40mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
900mV@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
41pF
Number :
1 N-channel
Output Capacitance(Coss) :
55pF
Input Capacitance(Ciss) :
390pF
Pd - Power Dissipation :
1.4W
Gate Charge(Qg) :
4.4nC@10V
Description :
N-Channel 30V 4.2A 1.4W Surface Mount SOT-23
Mfr. Part # :
AO3402-ES
Model Number :
AO3402-ES
Package :
SOT-23
Description

Product Overview

The AO3402-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and features a high-density cell design for low on-resistance, reliability, and avalanche rating.

Product Attributes

  • Brand: ElecSuper
  • Product Series: SuperMOS
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Certifications: Pb-free

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source VoltageBVDSS30V
Gate-Source VoltageVGS±12V
Continuous Drain CurrentIDTA=25°C4.2A
Continuous Drain CurrentIDTA=75°C3.3A
Maximum Power DissipationPD1.4W
Pulsed Drain CurrentIDM15.6A
Operating Junction TemperatureTJ150°C
Lead TemperatureTL260°C
Storage Temperature RangeTstg-55150°C
Junction-to-Ambient Thermal ResistanceRθJASingle Operation90°C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA30V
Zero Gate Voltage Drain CurrentIDSSVDS=30V, VGS=0V1uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±12V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA0.60.91.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=3.6A4051
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=2A4354
Drain-to-source On-resistanceRDS(on)VGS=2.5V, ID=1A5569
Forward transconductancegfsVDS=5V, ID=3.6A40S
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=15V390pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=15V55pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=15V41pF
Total Gate ChargeQG(TOT)VGS=10V, VDS=15V, ID=3.6A4.4nC
Gate-to-Source ChargeQGSVGS=10V, VDS=15V, ID=3.6A0.6nC
Gate-to-Drain ChargeQGDVGS=10V, VDS=15V, ID=3.6A1.4nC
Turn-On Delay Timetd(ON)VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω3.3ns
Rise TimetrVGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω1ns
Turn-Off Delay Timetd(OFF)VGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω21.7ns
Fall TimetfVGS=10V, VDS=15V, RL=3.5Ω, RG=6Ω2.1ns
Forward VoltageVSDVGS=0V, IS=3.6A1.5V

2504101957_ElecSuper-AO3402-ES_C19725090.pdf

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DC DC Conversion MOSFET ElecSuper AO3402 ES N Channel with Low Gate Charge and High Avalanche Rating

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Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
4.2A
RDS(on) :
40mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
900mV@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
41pF
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DC DC Conversion MOSFET ElecSuper AO3402 ES N Channel with Low Gate Charge and High Avalanche Rating

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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