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N Channel Enhancement Mode HXY MOSFET BSS123 Suitable for PWM and Uninterruptible Power Supply Systems
N Channel Enhancement Mode HXY MOSFET BSS123 Suitable for PWM and Uninterruptible Power Supply Systems
Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
170mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
6Ω@10V,0.17A
Gate Threshold Voltage (Vgs(th)) :
2.5V
Reverse Transfer Capacitance (Crss@Vds) :
7pF@50V
Number :
1 N-channel
Pd - Power Dissipation :
350mW
Input Capacitance(Ciss) :
30pF@50V
Description :
N-Channel 100V 0.17A 0.35W Surface Mount SOT-23
Mfr. Part # :
BSS123
Model Number :
BSS123
Package :
SOT-23
Description

BSS123 N-Channel Enhancement Mode MOSFET

The BSS123 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications. It is ideal for battery protection, load switching, and uninterruptible power supply systems.

Product Attributes

  • Brand: HUAXUANYANG ELECTRONICS CO.,LTD
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Product ID: BSS123
  • Pack Marking: BSS123
  • Package: SOT-23
  • ESD Rating: 1500V HBM

Technical Specifications

Parameter Test Conditions Min Typ Max Unit
VDS (Drain-Source Voltage) 100 V
VGS (Gate-Source Voltage) 20 V
ID (Drain Current-Continuous) 0.17 A
IDM (Drain Current-Pulsed) (Note 1) 0.68 A
PD (Maximum Power Dissipation) (TA=25) 0.35 W
TJ, TSTG (Operating Junction and Storage Temperature Range) -55 150
RJA (Thermal Resistance, Junction-to-Ambient) (Note 2) 350 /W
V(BR)DSS (Drain-source breakdown voltage) VGS=0, ID=250A 100 V
VGS(th) (Gate threshold voltage) VDS=VGS, ID=250A 1.5 2.5 V
IGSS (Gate-body leakage current) VDS=0, VGS=20V 10 A
IDSS (Zero gate voltage drain current) VDS=100V, VGS=0V 1 A
RDS(on) (Drain-source on-resistance) VGS=10V, ID=0.17A 6.0
RDS(on) (Drain-source on-resistance) VGS=4.5V, ID=0.17A 9.0
VSD (Diode forward voltage) IS=0.2A,VGS=0V 1.0 V
Ciss (Input capacitance) VDS=50V, VGS=0V, f=1MHz 30 pF
Coss (Output capacitance) VDS=50V, VGS=0V, f=1MHz 10 pF
Crss (Reverse transfer capacitance) VDS=50V, VGS=0V, f=1MHz 7 pF
td(on) (Turn-on delay time) VGS=10V,VDS=50V ID=200mA, RGEN=6 1.7 nS
tr (Rise time) VGS=10V,VDS=50V ID=200mA, RGEN=6 9 nS
td(off) (Turn-off delay time) VGS=10V,VDS=50V ID=200mA, RGEN=6 17 nS
tf (Fall time) VGS=10V,VDS=50V ID=200mA, RGEN=6 7 nS

2509181603_HXY-MOSFET-BSS123_C5184436.pdf

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N Channel Enhancement Mode HXY MOSFET BSS123 Suitable for PWM and Uninterruptible Power Supply Systems

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Product Detail
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
170mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
6Ω@10V,0.17A
Gate Threshold Voltage (Vgs(th)) :
2.5V
Reverse Transfer Capacitance (Crss@Vds) :
7pF@50V
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N Channel Enhancement Mode HXY MOSFET BSS123 Suitable for PWM and Uninterruptible Power Supply Systems

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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