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N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design
N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design
Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
65A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
3V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
39pF
Number :
1 N-channel
Output Capacitance(Coss) :
755pF
Pd - Power Dissipation :
71W
Input Capacitance(Ciss) :
2.07nF
Gate Charge(Qg) :
30.2nC@10V
Description :
N-Channel 100V 65A 71W Surface Mount PDFN5x6-8L
Mfr. Part # :
HYG080N10LS1C2
Model Number :
HYG080N10LS1C2
Package :
PDFN5x6-8L
Description

Product Overview

The HYG080N10LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 100V/65A rating with low on-state resistance (RDS(ON) = 6.9 m typ. @ VGS = 10V). The device is 100% avalanche tested, reliable, and rugged, with halogen-free options available (RoHS compliant).

Product Attributes

  • Brand: HYG (Huayi Microelectronics Co., Ltd.)
  • Origin: China
  • Certifications: RoHS Compliant, Halogen-Free Available
  • Package Type: PDFN5*6-8L

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=20A-6.98.2m
VGS=4.5V,IDS=20A-9.413.0m
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250A100--V
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250A1.02.03.0V
Continuous Drain CurrentIDTc=25C-65-A
Continuous Drain CurrentIDTc=100C-46-A
Pulsed Drain CurrentIDMTc=25C-260-A
Maximum Power DissipationPDTc=25C-71-W
Maximum Power DissipationPDTc=100C-35-W
Diode Forward VoltageVSDISD=20A,VGS=0V-0.841.3V
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-2070-pF
Output CapacitanceCossVGS=0V, VDS=25V, Frequency=1.0MHz-755-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS=25V, Frequency=1.0MHz-39-pF
Total Gate ChargeQg10VVDS =80V, VGS=10V, ID=20A-30.2-nC
Total Gate ChargeQg4.5VVDS =80V, VGS=4.5V, ID=20A-15.8-nC

2410121306_HUAYI-HYG080N10LS1C2_C3011225.pdf

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N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design

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Product Detail
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
65A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
3V@250uA
Type :
N-Channel
Contact Supplier
N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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