MachineU > China Products > Electrical Equipment & Supplies
load switch MOSFET HUASHUO HSBG2024 with trenched N channel structure and low gate threshold voltage
load switch MOSFET HUASHUO HSBG2024 with trenched N channel structure and low gate threshold voltage
Specifications
Configuration :
-
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
1.4A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
234mΩ@2.5V,450mA
Gate Threshold Voltage (Vgs(th)) :
500mV
Reverse Transfer Capacitance (Crss@Vds) :
5pF@10V
Number :
1 N-channel
Input Capacitance(Ciss) :
44pF@10V
Pd - Power Dissipation :
700mW
Gate Charge(Qg) :
1.2nC@4.5V
Description :
N-Channel 20V 1.4A 0.7W Surface Mount DFN1006-3
Mfr. Part # :
HSBG2024
Model Number :
HSBG2024
Package :
DFN1006-3
Description

Product Overview

The HSBG2024 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features a small single switch design, ESD protected gate, and low gate threshold voltage. This MOSFET meets RoHS and Green Product requirements with full function reliability approval.

Product Attributes

  • Brand: HSBG
  • Product Type: N-Ch MOSFET
  • Voltage Rating: 20V
  • Switching Speed: Fast Switching
  • Certifications: RoHS, Green Product
  • Gate Protection: ESD Protected Gate
  • Threshold Voltage: Low Gate Threshold Voltage
  • Package: DFN1006-3

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±8 ±8 V
ID@TA=25 Continuous Drain Current, VGS @ 4.5V1 1.4 A
ID@TA=70 Continuous Drain Current, VGS @ 4.5V1 1.11 A
IDM Pulsed Drain Current2 3.5 A
PD@TA=25 Total Power Dissipation3 0.7 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 200 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=550mA 190 230 m
VGS=2.5V , ID=450mA 234 305 m
VGS=1.8V , ID=350mA 303 455 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 1 V
IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25 1 uA
VDS=16V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V ±10 uA
gfs Forward Transconductance VDS=5V , ID=550mA 1 S
Qg Total Gate Charge (4.5V) VDS=10V , VGS=4.5V , ID=1000mA 1.2 nC
Qgs Gate-Source Charge 2.1 nC
Qgd Gate-Drain Charge 0.31 nC
Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=6 ID=500mA 1.2 ns
Tr Rise Time 24 ns
Td(off) Turn-Off Delay Time 15 ns
Tf Fall Time 14 ns
Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz 44 pF
Coss Output Capacitance 9 pF
Crss Reverse Transfer Capacitance 5 pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current 1.4 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 1.1 V

Ordering Information

Part Number Package Code Packaging Quantity
HSBG2024 DFN1006-3 Tape&Reel 10000

2410121326_HUASHUO-HSBG2024_C508789.pdf
Send your message to this supplier
Send Now

load switch MOSFET HUASHUO HSBG2024 with trenched N channel structure and low gate threshold voltage

Ask Latest Price
Product Detail
Configuration :
-
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
1.4A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
234mΩ@2.5V,450mA
Gate Threshold Voltage (Vgs(th)) :
500mV
Contact Supplier
load switch MOSFET HUASHUO HSBG2024 with trenched N channel structure and low gate threshold voltage

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single FETs, MOSFETs
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement