Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
140A
RDS(on) :
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
490pF
Number :
1 N-channel
Output Capacitance(Coss) :
943pF
Input Capacitance(Ciss) :
6.14nF
Pd - Power Dissipation :
285W
Gate Charge(Qg) :
130nC@10V
Description :
100V 140A 7.5mΩ@10V 4V@250uA 1 N-channel 285W TO-220FB Single FETs, MOSFETs RoHS
Mfr. Part # :
HY3410P
Model Number :
HY3410P
Package :
TO-220FB
Description

HY3410 N-Channel Enhancement Mode MOSFET

The HY3410 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance (RDS(ON) = 6.2 m typ. @ VGS=10V) and a continuous drain current of 100A. This series is reliable, rugged, 100% avalanche tested, and available in Lead Free and Green devices (RoHS Compliant).

Product Attributes

  • Brand: HYMEXA
  • Certifications: RoHS Compliant, Lead Free, Green Devices Available

Technical Specifications

Model VDSS (V) ID (A) RDS(ON) (m) Package Type VGS(th) (V) TJ (C)
HY3410P/M/B/PS/PM/MF 100 100 (TC=100C) 6.2 (typ. @ VGS=10V) TO-220FB-3L, TO-220FB-3S, TO-263-2L, TO-3PM-3S, TO-3PS-3L, TO-220MF-3L 2.0 - 4.0 175

2409302330_HUAYI-HY3410P_C357982.pdf

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Power Management N Channel Enhancement Mode MOSFET HUAYI HY3410P with 100A Continuous Drain Current

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Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
140A
RDS(on) :
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
490pF
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Power Management N Channel Enhancement Mode MOSFET HUAYI HY3410P with 100A Continuous Drain Current

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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