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N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching
N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
205A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.5V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
525pF@15V
Number :
1 N-channel
Pd - Power Dissipation :
187W
Input Capacitance(Ciss) :
5.85nF@15V
Gate Charge(Qg) :
56.9nC@10V
Description :
N-Channel 30V 205A 187W Surface Mount TO-263
Mfr. Part # :
HSH3018B
Model Number :
HSH3018B
Package :
TO-263
Description

Product Overview

The HSH3018B is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch Fast Switching MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Unit
HSH3018B Drain-Source Voltage (VDS) 30 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID) VGS @ 10V, TC=25 205 A
Continuous Drain Current (ID) VGS @ 10V, TC=100 145 A
Pulsed Drain Current (IDM) 500 A
Single Pulse Avalanche Energy (EAS) 246 mJ
Avalanche Current (IAS) 70.2 A
Total Power Dissipation (PD) TC=25 187 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Thermal Resistance Junction-Ambient (RJA) --- --- 62 /W
Thermal Resistance Junction-Case (RJC) --- --- 0.8 /W
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=250uA 30 --- --- V
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=30A --- 2 2.4 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V, ID=15A --- 2.6 3.2 m
Diode Characteristics Continuous Source Current (IS) VG=VD=0V, Force Current --- --- 205 A
Diode Forward Voltage (VSD) VGS=0V, IS=1A, TJ=25 --- 1.2 V

2410121447_HUASHUO-HSH3018B_C2903574.pdf
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N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
205A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.5V@250uA
Type :
N-Channel
Contact Supplier
N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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