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Low RDS on N Channel MOSFET JSCJ BSS138 Ideal for TTL CMOS Driver Applications and Solid State Relays
Low RDS on N Channel MOSFET JSCJ BSS138 Ideal for TTL CMOS Driver Applications and Solid State Relays
Specifications
Drain to Source Voltage :
50V
Current - Continuous Drain(Id) :
220mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
6Ω@4.5V,0.22A
Gate Threshold Voltage (Vgs(th)) :
800mV
Reverse Transfer Capacitance (Crss@Vds) :
6pF@25V
Number :
1 N-channel
Input Capacitance(Ciss) :
27pF@25V
Pd - Power Dissipation :
350mW
Description :
N-Channel 50V 0.22A 0.35W Surface Mount SOT-23
Mfr. Part # :
BSS138
Model Number :
BSS138
Package :
SOT-23
Description

Product Overview

The BSS138 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications, offering extremely low RDS(on). It features a rugged and reliable design, suitable for direct logic-level interfacing with TTL/CMOS drivers. Applications include driving relays, solenoids, lamps, hammers, displays, memories, transistors, battery-operated systems, and solid-state relays.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package: SOT-23
  • Material: Plastic-Encapsulate
  • Origin: China (implied by manufacturer location)

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Maximum Ratings
Drain-Source VoltageVDS50V
Continuous Gate-Source VoltageVGSS±20V
Continuous Drain CurrentID0.22A
Power DissipationPDTa=250.35W
Thermal Resistance Junction to AmbientRJA357/W
Operating TemperatureTj-55+150
Storage TemperatureTstg-55+150
Off Characteristics
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =250µA50V
Gate-body leakageIGSSVDS =0V, VGS =±20V±100nA
Zero gate voltage drain currentIDSSVDS =50V, VGS =0V0.5µA
VDS =30V, VGS =0V100nA
On Characteristics
Gate-threshold voltageVGS(th)VDS =VGS, ID =1mA0.801.50V
Static drain-source on-resistanceRDS(on)VGS =10V, ID =0.22A3.50Ω
VGS =4.5V, ID =0.22A6Ω
Forward transconductancegFSVDS =10V, ID =0.22A0.12S
Dynamic Characteristics
Input capacitanceCissVDS =25V,VGS =0V, f=1MHz27pF
Output capacitanceCoss13
Reverse transfer capacitanceCrss6
Switching Characteristics
Turn-on delay timetd(on)VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω5ns
Rise timetr18
Turn-off delay timetd(off)36
Fall timetf14
Drain-Source Body Diode Characteristics
Body diode forward voltageVSDIS=0.44A, VGS = 0V1.4V

2410121532_JSCJ-BSS138_C78284.pdf

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Low RDS on N Channel MOSFET JSCJ BSS138 Ideal for TTL CMOS Driver Applications and Solid State Relays

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Product Detail
Drain to Source Voltage :
50V
Current - Continuous Drain(Id) :
220mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
6Ω@4.5V,0.22A
Gate Threshold Voltage (Vgs(th)) :
800mV
Reverse Transfer Capacitance (Crss@Vds) :
6pF@25V
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Low RDS on N Channel MOSFET JSCJ BSS138 Ideal for TTL CMOS Driver Applications and Solid State Relays

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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