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JSCJ 2N7000 TA N Channel MOSFET Featuring High Drain Current and Low Gate Threshold Voltage in TO 92
JSCJ 2N7000 TA N Channel MOSFET Featuring High Drain Current and Low Gate Threshold Voltage in TO 92
Specifications
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
200mA
RDS(on) :
5Ω@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3V@1mA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
-
Number :
1 N-channel
Output Capacitance(Coss) :
25pF
Pd - Power Dissipation :
625mW
Input Capacitance(Ciss) :
60pF
Gate Charge(Qg) :
-
Description :
N-Channel 60V 0.2A 0.625W Through Hole TO-92
Mfr. Part # :
2N7000-TA
Model Number :
2N7000-TA
Package :
TO-92
Description

Product Overview

The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7000 is an N-Channel MOSFET in a TO-92 plastic-encapsulated package. It features a high-density cell design for low RDS(ON), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for various applications.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package Type: TO-92 Plastic-Encapsulate
  • Origin: China (implied by manufacturer name)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageV(BR)DSSVGS=0 V, ID=10 A60V
Gate-Threshold VoltageV(GS)thVDS=VGS, ID=1mA0.87V
Gate-body LeakagelGSSVDS=0 V, VGS=15 V10nA
Zero Gate Voltage Drain CurrentIDSSVDS=60 V, VGS=0 V1A
On-state Drain CurrentID(ON)VGS=4.5 V, VDS=10 V75mA
Drain-Source On-ResistanceRDS(on)VGS=4.5V, ID=75mA6
VGS=10V, ID=500mA5
Forward TransconductancegfsVDS=10 V, ID=200mA100mS
VGS=10V, ID=500mA2.5
Drain-source on-voltageVDS(on)VGS=4.5V, ID=75mA0.45V
Input CapacitanceCissVDS=25V, VGS=0V, f=1MHz60pF
Output CapacitanceCossVDS=25V, VGS=0V, f=1MHz25pF
Reverse Transfer CapacitanceCrssVDS=25V, VGS=0V, f=1MHz5pF
Turn-on Timetd(on)VDD=15 V, RL=30 ID=500mA,VGEN=10 V RG=2510ns
Turn-off Timetd(off)VDD=15 V, RL=30 ID=500mA,VGEN=10 V RG=2510ns

Ordering Information

Part NumberPackagePacking MethodPack Quantity
2N7000TO-92Bag1000pcs/Bag
2N7000TO-92Box2000pcs/Box

2409302331_JSCJ-2N7000-TA_C2910414.pdf

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JSCJ 2N7000 TA N Channel MOSFET Featuring High Drain Current and Low Gate Threshold Voltage in TO 92

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Product Detail
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
200mA
RDS(on) :
5Ω@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3V@1mA
Type :
N-Channel
Contact Supplier
JSCJ 2N7000 TA N Channel MOSFET Featuring High Drain Current and Low Gate Threshold Voltage in TO 92

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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