Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
13A
RDS(on) :
14mΩ@4.5V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
400mV
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
362pF
Pd - Power Dissipation :
3W
Input Capacitance(Ciss) :
2.05nF@10V
Gate Charge(Qg) :
30nC@10V
Description :
P-Channel 20V 13A 3W Surface Mount SOP-8
Mfr. Part # :
TPM2020UX
Model Number :
TPM2020UX
Package :
SOP-8
Description

Product Overview

P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). Designed for high-speed switching applications including battery protection, load switch, and power management.

Product Attributes

  • Brand: JY Electronics (implied from website)
  • Origin: China (implied from website)
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageBVDSSVGS= 0V, ID=-250A-20V
Zero Gate Voltage Drain CurrentIDSSVDS=-20V,VGS=0V,TC=25-1A
Gate-Body Leakage CurrentIGSSVGS= 10V, VDS=0V100nA
Gate Threshold VoltageVGS(th)VDS= VGS, ID=-250A-0.4-0.62-1.0V
Static Drain-Source On-ResistanceRDS(ON)VGS= -4.5V, ID=-10A1418m
Static Drain-Source On-ResistanceRDS(ON)VGS= -2.5V, ID=-6.5A1722V
Static Drain-Source On-ResistanceRDS(ON)VGS= -1.8V, ID=-4.0A2131
Diode Forward VoltageVSDIS=-13A,VGS=0V-0.8-1.2V
Maximum Body-Diode Continuous CurrentIS-13A
Input CapacitanceCissVDS=-10V,VGS=0V,f=1MHZ2050pF
Output CapacitanceCossVDS=-10V,VGS=0V,f=1MHZ411
Reverse Transfer CapacitanceCrssVDS=-10V,VGS=0V,f=1MHZ362
Total Gate ChargeQgVGS=-10V,VDS=-15V,ID=-9.1A30nC
Gate Source ChargeQgsVGS=-10V,VDS=-15V,ID=-9.1A5.3
Gate Drain ChargeQg dVGS=-10V,VDS=-15V,ID=-9.1A7.6
Turn-on Delay TimetD(on)VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.514ns
Turn-on Rise TimetrVGS=-10V,VDS=-15V, ID=-6A, RGEN=2.520
Turn-off Delay TimetD(off)VGS=-10V,VDS=-15V, ID=-6A, RGEN=2.595
Turn-off Fall TimetfVGS=-10V,VDS=-15V, ID=-6A, RGEN=2.565
Drain-source VoltageVDS-20V
Gate-source VoltageVGS10V
Drain Current (TA=25 @ Steady State)ID-13A
Drain Current (TA=70 @ Steady State)ID-10.4A
Pulsed Drain CurrentIDM-55A
Total Power Dissipation (@ TA=25)PD3.0W
Junction-to-Ambient Thermal Resistance (@ Steady State)RJA42/ W
Junction and Storage Temperature RangeTJ ,TSTG-55+150

2405091033_JingYang-TPM2020UX_C5364040.pdf

Send your message to this supplier
Send Now

P Channel MOSFET JingYang TPM2020UX Designed for Load Switch and Battery Protection Applications

Ask Latest Price
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
13A
RDS(on) :
14mΩ@4.5V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
400mV
Type :
P-Channel
Contact Supplier
P Channel MOSFET JingYang TPM2020UX Designed for Load Switch and Battery Protection Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
Contact Supplier
Submit Requirement