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650V High Voltage MOSFET Jingdao Microelectronics F7N65L Suitable for Switching Power Supply Designs
650V High Voltage MOSFET Jingdao Microelectronics F7N65L Suitable for Switching Power Supply Designs
Specifications
Drain to Source Voltage :
650V
Current - Continuous Drain(Id) :
7A
RDS(on) :
1.3Ω@10V,3.5A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
4V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
2.5pF
Output Capacitance(Coss) :
90pF
Pd - Power Dissipation :
46W
Input Capacitance(Ciss) :
1.08nF@25V
Gate Charge(Qg) :
22nC@10V
Description :
N-Channel 650V 7A 46W Through Hole TO-220F-3L
Mfr. Part # :
F7N65L
Model Number :
F7N65L
Package :
TO-220F-3L
Description

Product Overview

The F7N65L is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.

Product Attributes

  • Brand: Jingdao Microelectronics co.LTD
  • Origin: Shandong, China
  • Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
  • Lead Finish: Lead free, RoHS compliant

Technical Specifications

ParameterSymbolRatingUnitTest Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source VoltageVDSS650V
Gate-Source VoltageVGSS±30V
Pulsed Drain CurrentIDM28ANote 2
Avalanche Energy Single PulsedEAS435mJNote 3
Power DissipationPD46WTc=25°C
Continuous Drain CurrentID7ATc=25°C
Continuous Drain CurrentID4.5ATc=100°C
Peak Diode Recovery dv/dtdv/dt50V/nsNote 4
Junction to Ambient Thermal ResistanceRthJA62.5°C/W
Junction to Case Thermal ResistanceRthJC2.7°C/W
Operation Junction and Storage TemperatureTj, stg-55 ~ +150°C
OFF CHARACTERISTICS
Drain-Source Breakdown VoltageBVDSS650VVGS=0V, ID=250µA
Gate-Source Leakage CurrentIGSS±1µAVGS=±30V, VDS=0V
Drain-Source Leakage CurrentIDSS1µAVDS=650V, VGS=0V
ON CHARACTERISTICS
Static Drain-Source On-State ResistanceRDS(ON)1.3ΩVGS=10V, ID=3.5A
Gate Threshold VoltageVGS(TH)2.0VVDS=VGS, ID=250µA
DYNAMIC CHARACTERISTICS
Input CapacitanceCISS1080pFVDS=25V, VGS=0V, f=1.0MHz
Output CapacitanceCOSS90pF
Reverse Transfer CapacitanceCRSS22pF
Total Gate ChargeQG74nCVDS=520V, VGS=10V, ID=7A, IG=1mA (NOTE1,2)
Gate-Drain ChargeQGD20nC
Gate-Source ChargeQGS33nC
Turn-On Delay TimetD(ON)7nsVDS=325V, VGS=10V, ID=7A, RG=25Ω (NOTE1,2)
Turn-On Rise TimetR28ns
Turn-Off Delay TimetD(OFF)12ns
Turn-Off Fall TimetF5.5ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous CurrentIS7A
Maximum Body-Diode Pulsed CurrentISM28A
Drain-Source Diode Forward VoltageVSD1.4VIS=7A, VGS=0V
Reverse Recovery Timetrr506nsIS=7A, VGS=0V, di/dt=100A/us
Reverse Recovery ChargeQrr2.7µCIS=7A, VGS=0V, di/dt=100A/us

2209161700_Jingdao-Microelectronics-F7N65L_C5157084.pdf

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650V High Voltage MOSFET Jingdao Microelectronics F7N65L Suitable for Switching Power Supply Designs

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Product Detail
Drain to Source Voltage :
650V
Current - Continuous Drain(Id) :
7A
RDS(on) :
1.3Ω@10V,3.5A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
4V
Type :
N-Channel
Contact Supplier
650V High Voltage MOSFET Jingdao Microelectronics F7N65L Suitable for Switching Power Supply Designs

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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