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Low RDSon N Channel MOSFET JingYang JY3400X Suitable for DC DC Converters and Battery Powered Devices
Low RDSon N Channel MOSFET JingYang JY3400X Suitable for DC DC Converters and Battery Powered Devices
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.8A
RDS(on) :
41mΩ@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
1.4V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
77pF@15V
Number :
1 N-channel
Output Capacitance(Coss) :
99pF
Input Capacitance(Ciss) :
1.03nF@15V
Pd - Power Dissipation :
350mW
Gate Charge(Qg) :
9.7nC@4.5V
Description :
N-Channel 30V 5.8A 350mW Surface Mount SOT-23
Mfr. Part # :
JY3400X
Model Number :
JY3400X
Package :
SOT-23
Description

Product Overview

These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

Product Attributes

  • Brand: JY Electronics (inferred from website)
  • Origin: China (inferred from website)
  • Package Type: SOT23
  • Marking: 3400

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
N-Channel 30-V (D-S) MOSFET Maximum RatingsTA = 25 oC UNLESS OTHERWISE NOTED
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS12V
Continuous Drain CurrentIDTA=25oC5.8A
Continuous Drain CurrentIDTA=70oC4.9A
Pulsed Drain CurrentIDMb30A
Continuous Source Current (Body Diode)ISa2.5A
Power DissipationPDTA=25oC350mW
Operation Junction and Storage Temperature RangeTJ, Tstg-55150OC
Maximum Junction-to-AmbientRJAa357oC/W
Static Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA30V
Gate-Threshold VoltageVGS(th)VDS = VGS, ID = 250uA0.71.4V
Gate-Body LeakageIGSSVDS = 0 V, VGS =12V100nA
Drain-Source Leakage CurrentIDSSVDS = 24 V, VGS = 0 V TJ = 25oC1uA
Drain-Source Leakage CurrentIDSSVDS = 24 V, VGS = 0 V, TJ = 55oC5uA
Drain-Source On-ResistanceRDS(on)VGS = 10 V, ID = 5.8 A41m
Drain-Source On-ResistanceRDS(on)VGS = 4.5 V, ID = 5.0 A45m
Drain-Source On-ResistanceRDS(on)VGS = 2.5 V, ID = 4.0A59m
Forward TransconductancegfsVDS = 5V, ID = 5A15S
Diode Forward On VoltageVSDIS = 1.0 A, VGS = 0 V1.0V
Reverse Recovery TimeTrrIS =5A,VGS=0V, di/dt=100A/uS16nS
Reverse Recovery ChargeQrr8.9nC
Total Gate ChargeQgVDS = 15V, VGS = 4.5V ID = 5.8A9.712nC
Gate-Source ChargeQgs1.6nC
Gate-Drain ChargeQg d3.1nC
Turn-On Delay Timetd(on)VDS=15V, RL=2.7,RG = 3, VGS = 10V3.3nS
Turn-On Rise Timetr4.8nS
Turn-Off Delay Timetd(off)26.3nS
Turn-Off Fall Timetf4.1nS
Input CapacitanceCissVGS=0V,VDS=-15V,f =1.0MHz8231030pF
Output CapacitanceCoss99pF
Reverse Transfer CapacitanceCrss77pF
Gate ResistanceRgf =1.0MHz1.23.6

2405091034_JingYang-JY3400X_C5380423.pdf

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Low RDSon N Channel MOSFET JingYang JY3400X Suitable for DC DC Converters and Battery Powered Devices

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.8A
RDS(on) :
41mΩ@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
1.4V
Type :
N-Channel
Contact Supplier
Low RDSon N Channel MOSFET JingYang JY3400X Suitable for DC DC Converters and Battery Powered Devices

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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