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Power mosfet device Jingdao Microelectronics D11N20 designed for rugged avalanche and high speed switching
Power mosfet device Jingdao Microelectronics D11N20 designed for rugged avalanche and high speed switching
Specifications
Drain to Source Voltage :
200V
Current - Continuous Drain(Id) :
11A
RDS(on) :
400mΩ@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
2V
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
12pF
Output Capacitance(Coss) :
90pF
Pd - Power Dissipation :
74W
Input Capacitance(Ciss) :
1nF
Gate Charge(Qg) :
31nC@10V
Description :
N-Channel 200V 11A 74W Surface Mount TO-252-2
Mfr. Part # :
D11N20
Model Number :
D11N20
Package :
TO-252-2
Description

Product Overview

The D11N20 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It features advanced trench MOSFET technology for improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.

Product Attributes

  • Brand: Jingdao Microelectronics co.LTD
  • Origin: Shandong Jingdao Microelectronics Co., Ltd.
  • Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
  • Certifications: RoHS compliant

Technical Specifications

ParameterSymbolRatingUnitTest Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source VoltageVDSS200V
Gate-Source VoltageVGSS±30V
Continuous Drain CurrentID11ATC=25°C
Pulsed Drain CurrentIDM44ANote 2
Avalanche Energy Single PulsedEAS180mJL = 1mH,, VDD = 50V, RG = 20 Ω, Starting TJ = 25°C
Power DissipationPD74W
Peak Diode Recovery dv/dtdv/dt2.1V/nsISD ≤ 11A, di/dt ≤200A/s, VDD ≤ BVDSS, Starting TJ = 25°C
Operation Junction Temperature and Storage TemperatureTJ, Tstg-55 ~ +150°C
THERMAL DATA
Junction to AmbientRthJA63°C/WNote: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction to CaseRthJC2.31°C/W
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain-Source Breakdown VoltageBVDSS200VVGS=0V, ID=250uA
Gate-Source Leakage CurrentIGSS≤ 1μAVGS=±30V, VDS=0V
Drain-Source Leakage CurrentIDSS≤ 20μAVDS=200V, VGS=0V
ON CHARACTERISTICS
Gate Threshold VoltageVGS(TH)0.8 ~ 3.0VVDS=VGS, ID=250uA
Static Drain-Source On-State ResistanceRDS(ON)≤ 0.4ΩVGS=10V, ID=5.5A
DYNAMIC CHARACTERISTICS
Input CapacitanceCISS1000pFVDS=25V, VGS=0V, f=1.0MHz
Output CapacitanceCOSS120pFVDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer CapacitanceCRSS16.5pFVDS=25V, VGS=0V, f=1.0MHz
SWITCHING CHARACTERISTICS
Total Gate ChargeQG31nCVDS=160V,VGS=10V, ID=11A,IG=1mA (NOTE1,2)
Turn-On Delay TimetD(ON)3.3nsVDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2)
Turn-On Rise TimetR3.5nsVDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2)
Turn-Off Delay TimetD(OFF)150nsVDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2)
Turn-Off Fall TimetF20nsVDS=100V,VGS=10V, ID=11A,RG=20Ω (NOTE1,2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous CurrentIS11A
Maximum Body-Diode Pulsed CurrentISM44A
Drain-Source Diode Forward VoltageVSD1.4VIS=11A, VGS=0V
Reverse Recovery Timetrr370nsIS=11A,VGS=0V, di/dt=100A/s
Reverse Recovery ChargeQrr0.95μCIS=11A,VGS=0V, di/dt=100A/s

2201121700_Jingdao-Microelectronics-D11N20_C2935478.pdf

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Power mosfet device Jingdao Microelectronics D11N20 designed for rugged avalanche and high speed switching

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Product Detail
Drain to Source Voltage :
200V
Current - Continuous Drain(Id) :
11A
RDS(on) :
400mΩ@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
2V
Type :
N-Channel
Contact Supplier
Power mosfet device Jingdao Microelectronics D11N20 designed for rugged avalanche and high speed switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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