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Electrical ballast and switching power supply device Hangzhou Silan Microelectronics SVDZ24NT MOSFET
Electrical ballast and switching power supply device Hangzhou Silan Microelectronics SVDZ24NT MOSFET
Specifications
Drain to Source Voltage :
55V
Current - Continuous Drain(Id) :
17A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
45mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
12.5pF
Number :
1 N-channel
Output Capacitance(Coss) :
130pF
Input Capacitance(Ciss) :
400pF
Pd - Power Dissipation :
45W
Gate Charge(Qg) :
10.5nC@10V
Description :
N-Channel 55V 17A 45W Through Hole TO-220
Mfr. Part # :
SVDZ24NT
Model Number :
SVDZ24NT
Package :
TO-220
Description

Product Overview

The SVDZ24NT is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's new planar VDMOS process. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior withstand capability for high energy pulses in avalanche and commutation modes. This device is widely utilized in electrical ballast and low power switching power supply applications.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Hazardous Substance Control: Pb free (SVDZ24NT), Halogen free (SVDZ24NDTR)

Technical Specifications

CharacteristicsSymbolSVDZ24NTSVDZ24NDUnit
ABSOLUTE MAXIMUM RATINGS
Drain-Source VoltageVDS5555V
Gate-Source VoltageVGS±20±20V
Drain Current (TC=25°C)ID1717A
Drain Current (TC=100°C)ID1212A
Drain Current PulsedIDM6868A
Power Dissipation (TC=25°C)PD4545W
Derate above 25°C0.360.36W/°C
Single Pulsed Avalanche Energy (Note 1)EAS122122mJ
Operation Junction Temperature RangeTJ-55+175-55+175°C
Storage Temperature RangeTstg-55+175-55+175°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-CaseRθJC2.783.2°C/W
Thermal Resistance, Junction-to-AmbientRθJA62.562°C/W
ELECTRICAL CHARACTERISTICS
Drain -Source Breakdown VoltageBVDSS5555V
Drain-Source Leakage CurrentIDSS--20µA
Gate-Source Leakage CurrentIGSS--±100nA
Gate Threshold VoltageVGS(th)2.0 -- 4.02.0 -- 4.0V
Static Drain-Source On State ResistanceRDS(on)45 (typ.)45 (typ.)mΩ
Input CapacitanceCiss400 (typ.)400 (typ.)pF
Output CapacitanceCoss130 (typ.)130 (typ.)pF
Reverse Transfer CapacitanceCrss12.5 (typ.)12.5 (typ.)pF
Turn-on Delay Timetd(on)5.4 (typ.)5.4 (typ.)ns
Turn-on Rise Timetr32.5 (typ.)32.5 (typ.)ns
Turn-off Delay Timetd(off)22.1 (typ.)22.1 (typ.)ns
Turn-off Fall Timetf12.4 (typ.)12.4 (typ.)ns
Total Gate ChargeQg10.5 (typ.)10.5 (typ.)nC
Gate-Source ChargeQgs2.5 (typ.)2.5 (typ.)nC
Gate-Drain ChargeQg d4.0 (typ.)4.0 (typ.)nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source CurrentIS1717A
Pulsed Source CurrentISM6868A
Diode Forward VoltageVSD1.3 (typ.)1.3 (typ.)V
Reverse Recovery TimeTrr43 (typ.)43 (typ.)ns
Reverse Recovery ChargeQrr0.05 (typ.)0.05 (typ.)µC

2501091110_Hangzhou-Silan-Microelectronics-SVDZ24NT_C2761789.pdf

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Electrical ballast and switching power supply device Hangzhou Silan Microelectronics SVDZ24NT MOSFET

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Product Detail
Drain to Source Voltage :
55V
Current - Continuous Drain(Id) :
17A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
45mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Contact Supplier
Electrical ballast and switching power supply device Hangzhou Silan Microelectronics SVDZ24NT MOSFET

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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