Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
120A
RDS(on) :
3mΩ@10V,20A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
19.1pF@50V
Number :
1 N-channel
Output Capacitance(Coss) :
900pF
Pd - Power Dissipation :
125W
Input Capacitance(Ciss) :
4.797nF@50V
Gate Charge(Qg) :
84nC@10V
Description :
100V 120A 3mΩ@10V,20A 4V@250uA 1 N-channel 125W TO-263 Single FETs, MOSFETs RoHS
Mfr. Part # :
120N10
Model Number :
120N10
Package :
TO-263
Description

Product Overview

The 120N10 is an N-Channel Power MOSFET featuring ultra-low RDS(ON) and low gate charge. It is 100% UIS tested and 100% Rg tested, offering Pb-free lead plating and being Halogen-free and RoHS-compliant. This MOSFET is ideal for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC & AC/DC (SR) sub-systems and power management in telecom, industrial automation, and CE products.

Product Attributes

  • Certifications: Pb-free Lead Plating, Halogen-free, RoHS-compliant

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
ABSOLUTE MAXIMUM RATINGS
Drain-to-Source VoltageVDS100V
Gate-to-Source VoltageVGS±20V
Junction & Storage Temperature RangeTJ, TSTG-55150°C
Power DissipationPDTC = 25°C312W
TC = 100°C125W
Pulsed Drain CurrentIDM(2)689A
Avalanche EnergyEAS(3)726mJ
Continuous Drain CurrentIDTC = 25°C (1)200A
TC = 100°C (1)120A
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown VoltageV(BR)DSSID = 250µA, VGS = 0V100V
Gate Threshold VoltageVGS(th)VDS = VGS, ID = 250µA2.03.04.0V
Static Drain-Source ON-ResistanceRDS(ON)VGS = 10V, ID = 20A (1)3.0mΩ
Gate-Body Leakage CurrentIGSSVDS = 0V, VGS = ±20V±100nA
Zero Gate Voltage Drain CurrentIDSSVDS = 100V, VGS = 0V1.0µA
TJ = 55°C5.0µA
Forward TransconductancegFSVDS = 5V, ID = 20A50S
Diode Forward VoltageVSDIS = 20A, VGS = 0V (2)0.661.0V
DYNAMIC PARAMETERS
Input CapacitanceCissVGS = 0V, VDS = 50V, f = 1MHz4797pF
Output CapacitanceCossVGS = 0V, VDS = 50V, f = 1MHz900pF
Reverse Transfer CapacitanceCrssVGS = 0V, VDS = 50V, f = 1MHz19.1pF
SWITCHING PARAMETERS
Gate ResistanceRgVGS = 0V, VDS= 0V, f = 1MHz1.9Ω
Total Gate ChargeQgVDS = 50V, ID = 20A, VGS = 10V (5)84nC
VDS = 50V, ID = 20A, VGS = 6.0V (5)57nC
Gate Source ChargeQgsVDS = 50V, ID = 20A, VGS = 10V (5)24nC
Gate Drain ChargeQgdVDS = 50V, ID = 20A, VGS = 10V (5)27nC
Turn-On Delay TimetD(on)VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5)21ns
Turn-On Rise TimetrVGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5)35ns
Turn-Off Delay TimetD(off)VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5)49ns
Turn-Off Fall TimetfVGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5)30ns
Body Diode Reverse Recovery TimetrrIF = 20A, dIF/dt = 100A/µs (5)71ns
Body Diode Reverse Recovery ChargeQrrIF = 20A, dIF/dt = 100A/µs (5)127nC
THERMAL PERFORMANCE
Thermal Resistance, Junction-to-CaseRθJC0.40°C/W
Thermal Resistance, Junction-to-AmbientRθJA45°C/W

2408021727_GOODWORK-120N10_C22466870.pdf

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Power Management and Motor Driving Using GOODWORK 120N10 N Channel MOSFET with Pb Free Lead Plating

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Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
120A
RDS(on) :
3mΩ@10V,20A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
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Power Management and Motor Driving Using GOODWORK 120N10 N Channel MOSFET with Pb Free Lead Plating

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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