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N Channel Power MOSFET Hangzhou Silan Microelectronics SVF3878PN with Low On Resistance TO3P Package
N Channel Power MOSFET Hangzhou Silan Microelectronics SVF3878PN with Low On Resistance TO3P Package
Specifications
Configuration :
-
Drain to Source Voltage :
900V
Current - Continuous Drain(Id) :
9A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1Ω@10V
Gate Threshold Voltage (Vgs(th)) :
4.5V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
47pF
Number :
1 N-channel
Output Capacitance(Coss) :
208pF
Input Capacitance(Ciss) :
2.009nF
Pd - Power Dissipation :
150W
Gate Charge(Qg) :
68nC@10V
Description :
N-Channel 900V 9A 150W Through Hole TO-3P-3
Mfr. Part # :
SVF3878PN
Model Number :
SVF3878PN
Package :
TO-3P-3
Description

Product Overview

The SVF3878PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior robustness in avalanche and commutation modes. This device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Material: Pb free
  • Package: TO-3P

Technical Specifications

CharacteristicsSymbolTest conditionsMin.Typ.Max.Unit
ELECTRICAL CHARACTERISTICS
Drain -Source Breakdown VoltageBVDSSVGS=0V, ID=250A900----V
Drain-Source Leakage CurrentIDSSVDS=900V, VGS=0V----100A
Gate-Source Leakage CurrentIGSSVGS=30V, VDS=0V----10.0A
Gate Threshold VoltageVGS(th)VGS=VDS, ID=250A2.5--4.5V
On State ResistanceRDS(on)VGS=10V, ID=4.5A--1.01.28
Input CapacitanceCissVDS=25V, VGS=0V, f=1.0MHz--2009--pF
Output CapacitanceCossVDS=25V, VGS=0V, f=1.0MHz--208--pF
Reverse Transfer CapacitanceCrssVDS=25V, VGS=0V, f=1.0MHz--47--pF
Turn-on Delay Timetd(on)VDD=400V, RG=25, ID=4.0A--22--ns
Turn-on Rise TimetrVDD=400V, RG=25, ID=4.0A--28--ns
Turn-off Delay Timetd(off)VDD=400V, RG=25, ID=4.0A--84--ns
Turn-off Fall TimetfVDD=400V, RG=25, ID=4.0A--30--ns
Total Gate ChargeQgVDD=450V, VGS=10V, ID=9.0A--68--nC
Gate-Source ChargeQgsVDD=450V, VGS=10V, ID=9.0A--10--nC
Gate-Drain ChargeQg dVDD=450V, VGS=10V, ID=9.0A--39--nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Source CurrentIS------9.0A
Pulsed Source CurrentISM------27A
Diode Forward VoltageVSDIS=9.0A, VGS=0V----1.4V
Reverse Recovery TimeTrrIS=9.0A, VGS=0V, dIF/dt=100A/S--715--ns
Reverse Recovery ChargeQrrIS=9.0A, VGS=0V, dIF/dt=100A/S--6.5--C
ABSOLUTE MAXIMUM RATINGS
Drain-Source VoltageVDSUNLESS OTHERWISE NOTED, TA=25C----900V
Gate-Source VoltageVGSUNLESS OTHERWISE NOTED, TA=25C--30--V
Drain CurrentIDTC=25C--9.0--A
Drain CurrentIDTC=100C--5.7--A
Drain Current PulsedIDM------27.0A
Power DissipationPDTC=25C----150W
Power Dissipation Derate--above 25C----1.2W/C
Single Pulsed Avalanche EnergyEASNote 1----966mJ
Operation Junction Temperature RangeTJ---55--+150C
Storage Temperature RangeTstg---55--+150C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-CaseRJC------0.83C/W
Thermal Resistance, Junction-to-AmbientRJA------50C/W

2501091111_Hangzhou-Silan-Microelectronics-SVF3878PN_C393727.pdf

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N Channel Power MOSFET Hangzhou Silan Microelectronics SVF3878PN with Low On Resistance TO3P Package

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Product Detail
Configuration :
-
Drain to Source Voltage :
900V
Current - Continuous Drain(Id) :
9A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1Ω@10V
Gate Threshold Voltage (Vgs(th)) :
4.5V@250uA
Contact Supplier
N Channel Power MOSFET Hangzhou Silan Microelectronics SVF3878PN with Low On Resistance TO3P Package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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