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High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications
High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
36mΩ@10V,4.1A
Gate Threshold Voltage (Vgs(th)) :
1.5V@250uA
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
56pF@15V
Number :
1 P-Channel
Input Capacitance(Ciss) :
530pF@15V
Pd - Power Dissipation :
1.5W
Output Capacitance(Coss) :
70pF
Gate Charge(Qg) :
6.8nC@10V
Description :
P-Channel 30V 5.3A 1.5W Surface Mount SOP-8
Mfr. Part # :
9435-GK
Model Number :
9435-GK
Package :
SOP-8
Description

Product Overview

The 9435 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements with full function reliability. This device features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology, making it suitable for fast switching applications.

Product Attributes

  • Product Name: 9435
  • Product Type: P-Ch MOSFET
  • Certifications: RoHS, Green Product

Technical Specifications

SymbolParameterRatingUnitsConditionsMin.Typ.Max.
VDSDrain-Source Voltage-30V
VGSGate-Source Voltage20V
ID@TJ=25CContinuous Drain Current, VGS @ -10V-5.3A1
ID@TJ=70CContinuous Drain Current, VGS @ -10V-4.7A1
IDMPulsed Drain Current-20A2
EASSingle Pulse Avalanche EnergymJ3
IASAvalanche CurrentA
PD@TJ=25CTotal Power Dissipation1.5W4
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150
JAThermal Resistance Junction-Ambient/W55
V(BR)DSSDrain-Source Breakdown Voltage-30VVGS= 0V, ID = 250A-30
IDSSZero Gate Voltage Drain Current-1AVDS= -30V, VGS= 0V
IGSSGate-Source Leakage100nAVDS= 0V, VGS= 20V
VGS(th)Gate-Source Threshold voltage-1 to -2.5VVDS= VGS, ID = 250A-1-1.5-2.5
RDS(on)Drain-Source on-State Resistance36mVGS= -10V, ID = -4.1A51
RDS(on)Drain-Source on-State Resistance48mVGS= -4.5V, ID = -3A79
CissInput Capacitance530pFVGS = 0V , VDS = -15V, f = 1.0MHz
CossOutput Capacitance70pFVGS = 0V , VDS = -15V, f = 1.0MHz
CrssReverse Transfer Capacitance56pFVGS = 0V , VDS = -15V, f = 1.0MHz
QgTotal Gate Charge6.8nCVGS = -10V, VDS = -15V, ID = -4.1A
QgsGateSource Charge1.0nCVGS = -10V, VDS = -15V, ID = -4.1A
QgdGateDrain Charge1.4nCVGS = -10V, VDS = -15V, ID = -4.1A
td(on)Turn-on Delay Time14nsVGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5
trRise Time61nsVGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5
td(off)Turn-off Delay time19nsVGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5
tfFall Time10nsVGS = -10V, VDS = -15V, RL= 15,RGEN= 2.5
VSDDiode Forward Voltage-1.2VIS = -4.1A, VGS = 0V
ISContinuous Source Current-5.3A

2504101957_GOODWORK-9435-GK_C46061577.pdf

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High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
36mΩ@10V,4.1A
Gate Threshold Voltage (Vgs(th)) :
1.5V@250uA
Type :
P-Channel
Contact Supplier
High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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