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Load switch MOSFET series HUASHUO HSSX2901 featuring high cell density and low gate charge for switching
Load switch MOSFET series HUASHUO HSSX2901 featuring high cell density and low gate charge for switching
Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
800mA
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
500mΩ@4.5V,0.65A
Gate Threshold Voltage (Vgs(th)) :
1V
Reverse Transfer Capacitance (Crss@Vds) :
17pF@6V
Number :
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss) :
-
Pd - Power Dissipation :
300mW
Gate Charge(Qg) :
3.7nC@4.5V
Description :
N-Channel+P-Channel Array 20V 0.8A 0.3W Surface Mount SOT-563
Mfr. Part # :
HSSX2901
Model Number :
HSSX2901
Package :
SOT-563
Description

Product Overview

The HSSX2901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDSON and gate charge. Designed for small power switching and load switch applications, these MOSFETs offer interfacing switching, load/power switching, logic level shift, and ESD-protected gate functionalities. The HSSX2901 meets RoHS and Green Product requirements with full function reliability approval.

Product Attributes

  • Brand: HSSX
  • Certifications: RoHS, Green Product

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSSX2901 (N-Channel) Drain-Source Voltage (VDS) 20 V
Gate-Source Voltage (VGS) 8 V
Continuous Drain Current (ID@TA=25) VGS @ -4.5V 0.8 A
Pulsed Drain Current (IDM) 3.1 A
Total Power Dissipation (PD@TA=25) 0.3 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=250uA 20 V
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V , ID=0.65A 300 500 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=2.5V , ID=0.45A 600 800 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =250uA 0.5 0.7 1.0 V
Drain-Source Leakage Current (IDSS) VDS=16V , VGS=0V , TJ=25 1 uA
Drain-Source Leakage Current (IDSS) VDS=16V , VGS=0V , TJ=55 5 uA
Gate-Source Leakage Current (IGSS) VGS=8V , VDS=0V 10 uA
Total Gate Charge (Qg) VDS=6V , VGS=4.5V , ID=0.3A 3.7 nC
Input Capacitance (Ciss) VDS=6V , VGS=0V , f=1MHz 41 pF
HSSX2901 (P-Channel) Drain-Source Voltage (VDS) -20 V
Gate-Source Voltage (VGS) 8 V
Continuous Drain Current (ID@TA=25) VGS @ -4.5V -0.8 A
Pulsed Drain Current (IDM) -3.1 A
Total Power Dissipation (PD@TA=25) 0.3 W
Storage Temperature Range (TSTG) -55 150
Operating Junction Temperature Range (TJ) -55 150
Drain-Source Breakdown Voltage (BVDSS) VGS=0V , ID=-250uA -20 V
Static Drain-Source On-Resistance (RDS(ON)) VGS=-4.5V , ID=-700mA 600 800 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=-2.5V , ID=-300mA 800 1000 m
Gate Threshold Voltage (VGS(th)) VGS=VDS , ID =-250uA -0.5 -0.7 -1.0 V
Drain-Source Leakage Current (IDSS) VDS=-16V , VGS=0V , TJ=25 -1 uA
Drain-Source Leakage Current (IDSS) VDS=-16V , VGS=0V , TJ=55 -5 uA
Gate-Source Leakage Current (IGSS) VGS=8V , VDS=0V 10 uA
Total Gate Charge (Qg) VDS=-6V , VGS=-4.5V , ID=-0.3A 19 nC
Input Capacitance (Ciss) VDS=-6V , VGS=0V , f=1MHz 57 pF

2409272301_HUASHUO-HSSX2901_C7543683.pdf

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Load switch MOSFET series HUASHUO HSSX2901 featuring high cell density and low gate charge for switching

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Product Detail
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
800mA
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
500mΩ@4.5V,0.65A
Gate Threshold Voltage (Vgs(th)) :
1V
Reverse Transfer Capacitance (Crss@Vds) :
17pF@6V
Contact Supplier
Load switch MOSFET series HUASHUO HSSX2901 featuring high cell density and low gate charge for switching

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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