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GOODWORK 20N10 100V 20A N channel Power Trench MOSFET ideal for PWM and load switch power circuits
GOODWORK 20N10 100V 20A N channel Power Trench MOSFET ideal for PWM and load switch power circuits
Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
20A
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
48mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds) :
74pF
Number :
1 N-channel
Output Capacitance(Coss) :
85pF
Pd - Power Dissipation :
40W
Input Capacitance(Ciss) :
2.384nF
Gate Charge(Qg) :
69nC@10V
Description :
N-Channel 100V 20A 40W Surface Mount TO-252
Mfr. Part # :
20N10
Model Number :
20N10
Package :
TO-252
Description

Product Overview

The 20N10 is a 100V, 20A N-channel Power Trench MOSFET designed for various power management applications. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. This device is 100% UIS and Vds tested, and is Halogen-free and RoHS-compliant.

Product Attributes

  • Certifications: Halogen-free; RoHS-compliant

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-to-Source VoltageVDSS100V
Gate-to-Source VoltageVGS±20V
Pulsed Drain CurrentIDM(1)100A
Single Pulsed Avalanche EnergyEAS(2)31mJ
Continuous Drain CurrentID@VGS=10V, TC = 25°C20A
Continuous Drain CurrentID@VGS=10V, TC = 100°C16A
Power DissipationPD@TC = 25°C3436W
Power DissipationPD@TC = 100°C16W
Junction & Storage Temperature RangeTJ, TSTG-55to150°C
Electrical Characteristics
Drain-Source Breakdown VoltageV(BR)DSSID = 250mA, VGS = 0V100V
Zero Gate Voltage Drain CurrentIDSSVDS = 100V, VGS = 0V1.0mA
Gate-Body Leakage CurrentIGSSVDS = 0V, VGS = ±20V±100nA
Gate Threshold VoltageVGS(th)VDS = VGS, ID = 250mA1.01.52.2V
Static Drain-Source ON-ResistanceRDS(ON)VGS = 10V, ID = 20A (4)3448mΩ
Static Drain-Source ON-ResistanceRDS(ON)VGS = 4.5V, ID = 6A (4)3655mΩ
Gate ResistanceRgVGS = 0V, VDS = 50V, f = 1MHz1.8Ω
Input CapacitanceCissVDS = 50V, ID = 20A, f = 1MHz12611766pF
Output CapacitanceCossVGS = 0V, VDS = 50V, f = 1MHz4563pF
Reverse Transfer CapacitanceCrssVGS = 0V, VDS = 50V, f = 1MHz3955pF
Total Gate ChargeQgVGS = 0 to 10V3144nC
Gate Source ChargeQgsVDS = 50V, ID = 20A56nC
Gate Drain("Miller") ChargeQgd812nC
Turn-On Delay Timetd(on)VGS = 10V, ID = 10A8ns
Turn-On Rise Timetr19ns
Turn-Off Delay Timetd(off)39ns
Turn-Off Fall Timetf8ns
Continuous Body Diode Forward CurrentIS20A
Maximum Pulsed Body Diode Forward CurrentISM81A
Body Diode Forward VoltageVSDIF = 20A, di/dt = 100A/us1.2V
Body Diode Reverse Recovery TimetrrIF = 20A, di/dt = 100A/us1926ns
Body Diode Reverse Recovery ChargeQrrIF = 20A, di/dt = 100A/us39.0nC
Thermal Characteristics
Thermal Resistance, Junction to CaseRθJC3.1°C/W
Thermal Resistance, Junction to Ambient(3)RθJA40°C/W

2408021727_GOODWORK-20N10_C22470951.pdf

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GOODWORK 20N10 100V 20A N channel Power Trench MOSFET ideal for PWM and load switch power circuits

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Product Detail
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
20A
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
48mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds) :
74pF
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GOODWORK 20N10 100V 20A N channel Power Trench MOSFET ideal for PWM and load switch power circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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