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Hangzhou Silan Microelectronics SVF4N60F N channel MOSFET for DC DC Converters and PWM Motor Drivers
Hangzhou Silan Microelectronics SVF4N60F N channel MOSFET for DC DC Converters and PWM Motor Drivers
Specifications
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
4A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
2Ω@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
4.5pF
Number :
1 N-channel
Output Capacitance(Coss) :
55pF
Input Capacitance(Ciss) :
433pF
Pd - Power Dissipation :
33W
Gate Charge(Qg) :
13nC@10V
Description :
N-Channel 600V 4A 33W Through Hole TO-220F-3
Mfr. Part # :
SVF4N60F
Model Number :
SVF4N60F
Package :
TO-220F-3
Description

Product Overview

The SVF4N60D/F/T/M is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse handling capabilities in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Certifications: Pb free, Halogen free

Technical Specifications

Part NumberPackageDrain-Source Voltage (VDS)Gate-Source Voltage (VGS)Drain Current (ID) @ TC=25CDrain Current (ID) @ TC=100CPower Dissipation (PD) @ TC=25CRDS(on)(typ.) @ VGS=10VBVDSSIDSS @ VDS=600V, VGS=0VIGSS @ VGS=30V, VDS=0VVGS(th) @ ID=250ACiss @ VDS=25V, f=1MHzCoss @ VDS=25V, f=1MHzCrss @ VDS=25V, f=1MHztd(on) @ VDD=300V, ID=4Atr @ VDD=300V, ID=4Atd(off) @ VDD=300V, ID=4Atf @ VDD=300V, ID=4AQg @ VDS=480V, ID=4AQgs @ VDS=480V, ID=4AQgd @ VDS=480V, ID=4ARJCRJA
SVF4N60FTO-220F-3L600V30V4.0A2.5A33W2.0600V1.0A100nA2.0-4.0V433pF55pF4.5pF10ns26ns29ns26ns13nC2.8nC6.2nC3.85C/W62.5C/W
SVF4N60D/MTO-251D-3L600V30V4.0A2.5A77W2.0600V1.0A100nA2.0-4.0V433pF55pF4.5pF10ns26ns29ns26ns13nC2.8nC6.2nC1.61C/W62.0C/W
SVF4N60TTO-220-3L600V30V4.0A2.5A110W2.0600V1.0A100nA2.0-4.0V433pF55pF4.5pF10ns26ns29ns26ns13nC2.8nC6.2nC1.14C/W62.5C/W

2501091110_Hangzhou-Silan-Microelectronics-SVF4N60F_C28532.pdf

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Hangzhou Silan Microelectronics SVF4N60F N channel MOSFET for DC DC Converters and PWM Motor Drivers

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Product Detail
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
4A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
2Ω@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Contact Supplier
Hangzhou Silan Microelectronics SVF4N60F N channel MOSFET for DC DC Converters and PWM Motor Drivers

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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