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Power Management Device ElecSuper FSS2301S ES P Channel MOSFET Suitable for DC DC Converter Circuits
Power Management Device ElecSuper FSS2301S ES P Channel MOSFET Suitable for DC DC Converter Circuits
Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
1.3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
82mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)) :
400mV
Reverse Transfer Capacitance (Crss@Vds) :
25pF@10V
Number :
1 P-Channel
Input Capacitance(Ciss) :
185pF@10V
Pd - Power Dissipation :
800mW
Gate Charge(Qg) :
2.2nC@4.5V
Description :
20V 1.3A 82mΩ@4.5V,2A 400mV 1 P-Channel 800mW SOT-23 Single FETs, MOSFETs RoHS
Mfr. Part # :
FSS2301S-ES
Model Number :
FSS2301S-ES
Package :
SOT-23
Description

Product Overview

The FSS2301S-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.

Product Attributes

  • Brand: ElecSuper
  • Product Name: SuperMOS
  • Package: SOT-23
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source VoltageBVDSS-20V
Gate-Source VoltageVGS±8V
Continuous Drain CurrentIDTA=25°C2.3A
Continuous Drain CurrentIDTA=75°C1.7A
Maximum Power DissipationPDTA=25°C1.4W
Maximum Power DissipationPDTA=75°C0.84W
Pulsed Drain CurrentIDM9.2A
Operating Junction TemperatureTJ150°C
Storage Temperature RangeTstg-55+150°C
Junction-to-Ambient Thermal ResistanceRθJASingle Operation90°C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-20V
Zero Gate Voltage Drain CurrentIDSSVDS=-20V, VGS=0V-1uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±8V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-0.4-0.7-1.0V
Drain-to-source On-resistanceRDS(on)VGS=-4.5V, ID=-2.3A90112mΩ
Drain-to-source On-resistanceRDS(on)VGS=-2.5V, ID=-2A110142mΩ
Forward trans conductancegfsVDS=-5V, ID=-2.3A6.5S
Input CapacitanceCISSVGS=0V, VDS =-10V, f=1MHz405pF
Output CapacitanceCOSS75pF
Reverse Transfer CapacitanceCRSS55pF
Gate ResistanceRgf=1MHZ6Ω
Total Gate ChargeQG(TOT)VGS=-2.5V, VDS=-10V, ID=-2.3A3.36nC
Gate-to-Source ChargeQGS0.7nC
Gate-to-Drain ChargeQGD1.3nC
Turn-On Delay Timetd(ON)VGS=-4.5V, VDS=10V, RL=10Ω, ID=-1A, RG=1Ω1120ns
Rise Timetr3560ns
Turn-Off Delay Timetd(OFF)3050ns
Fall Timetf1020ns
Forward VoltageVSDVGS=0V, IS=-1.0A-0.8-1.5V

2504101957_ElecSuper-FSS2301S-ES_C5224172.pdf

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Power Management Device ElecSuper FSS2301S ES P Channel MOSFET Suitable for DC DC Converter Circuits

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Product Detail
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
1.3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
82mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)) :
400mV
Reverse Transfer Capacitance (Crss@Vds) :
25pF@10V
Contact Supplier
Power Management Device ElecSuper FSS2301S ES P Channel MOSFET Suitable for DC DC Converter Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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