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ElecSuper BSS84 ES P channel MOSFET offering fast switching and avalanche rating for power circuits
ElecSuper BSS84 ES P channel MOSFET offering fast switching and avalanche rating for power circuits
Specifications
Configuration :
-
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
200mA
RDS(on) :
5.2Ω@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
1.6pF@25V
Number :
1 P-Channel
Pd - Power Dissipation :
350mW
Input Capacitance(Ciss) :
17pF@25V
Gate Charge(Qg) :
1.1nC@4.5V
Description :
P-Channel 60V 0.2A 0.35W Surface Mount SOT-23
Mfr. Part # :
BSS84(ES)
Model Number :
BSS84(ES)
Package :
SOT-23
Description

BSS84(ES) SuperMOS - P-channel MOSFET

The BSS84(ES) is a P-Channel enhancement mode MOSFET utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free, offering fast switching, high density cell design, and avalanche rating.

Product Attributes

  • Brand: ElecSuper
  • Model: BSS84(ES)
  • Package: SOT-23
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Color: 84K (Marking)
  • Origin: China (implied by www.elecsuper.com)
  • Lead Free: Pb-free

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-60V
Zero Gate Voltage Drain CurrentIDSSVGS=0V, VDS=-60V-100nA
Gate-to-source Leakage CurrentIGSSVGS=20V, VDS=0V10uA
ON CHARACTERISTICS
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-1.1-1.6-2.2V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-0.15A3.55.2
VGS=-4.5V, ID=-0.1A4.56.3
CHARGES AND CAPACITANCES
CapacitanceCISSVGS=0V, VDS =-25V f=1MHz17pF
COSS4pF
CRSS1.6pF
Gate ChargeQG(TOT)VGS=-4.5V, VDS=-25V ID=-0.1A1.1nC
QGS0.3nC
QGD0.2nC
SWITCHING CHARACTERISTICS
Switching Timestd(ON)VGS=-10V, VDS=-25V ID=-0.1A, RG=64.8ns
tr19ns
td(OFF)52ns
tf32ns
BODY DIODE CHARACTERISTICS
Forward VoltageVSDVGS=0V, ISD=-0.15A-0.45-0.88-1.5V
Absolute Maximum Ratings & Thermal Characteristics
Drain-Source VoltageBVDSS-60V
Gate-Source VoltageVGS20V
Continuous Drain Current (TA=25C)ID-0.20A
Continuous Drain Current (TA=100C)ID-0.13A
Maximum Power DissipationPD0.35W
Pulsed Drain CurrentIDM-0.80A
Operating Junction TemperatureTJ-55+150C
Storage Temperature RangeTstg-55+150C
Junction-to-Ambient Thermal ResistanceRJASingle Operation357C/W

2411121459_ElecSuper-BSS84-ES_C42379935.pdf

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ElecSuper BSS84 ES P channel MOSFET offering fast switching and avalanche rating for power circuits

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Product Detail
Configuration :
-
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
200mA
RDS(on) :
5.2Ω@10V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
2.2V@250uA
Contact Supplier
ElecSuper BSS84 ES P channel MOSFET offering fast switching and avalanche rating for power circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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