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Power Switching MOSFET ElecSuper NTA7002NT1G ES with Low Gate Charge and Avalanche Rated Capability
Power Switching MOSFET ElecSuper NTA7002NT1G ES with Low Gate Charge and Avalanche Rated Capability
Specifications
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
300mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1.85Ω@10V
Gate Threshold Voltage (Vgs(th)) :
1.6V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
4pF@25V
Number :
1 N-channel
Output Capacitance(Coss) :
11pF
Input Capacitance(Ciss) :
28pF
Pd - Power Dissipation :
350mW
Gate Charge(Qg) :
1.8nC@4.5V
Description :
N-Channel 60V 300mA 350mW Surface Mount SOT-523
Mfr. Part # :
NTA7002NT1G-ES
Model Number :
NTA7002NT1G-ES
Package :
SOT-523
Description

Product Overview

The NTA7002NT1G-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), ESD protection, and is avalanche rated.

Product Attributes

  • Brand: ElecSuper
  • Package: SOT-523
  • Material: Halogen free
  • Certifications: UL 94V-0
  • ESD Protection (HBM): 2kV

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Rating & Thermal Characteristics
Drain-Source VoltageBVDSS60V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentIDTA=250.3A
Continuous Drain CurrentIDTA=1000.2A
Maximum Power DissipationPD350mW
Pulsed Drain CurrentIDM1.2A
Operating Junction TemperatureTJ150±
Lead TemperatureTL260±
Storage Temperature RangeTstg-55to150±
Junction-to-Ambient Thermal ResistanceRθJASingle Operation357°C/W
Electrical Characteristics
OFF CHARACTERISTICS
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA60V
Zero Gate Voltage Drain CurrentIDSSVDS=60V, VGS=0V1.0uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±20V±10uA
ON CHARACTERISTICS
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA1.01.62.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=0.3A1.852.2Ω
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=0.2A2.053.0Ω
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=25V28pF
Output CapacitanceCOSS11pF
Reverse Transfer CapacitanceCRSS4pF
Total Gate ChargeQG(TOT)VGS=4.5V, VDS=10V, ID=0.3A1.8nC
Gate-to-Source ChargeQGS0.3
Gate-to-Drain ChargeQGD0.6
SWITCHING CHARACTERISTICS
Turn-On Delay Timetd(ON)VGS=10V, VDS=10V, ID=0.2A, RG=10Ω2ns
Rise Timetr15
Turn-Off Delay Timetd(OFF)7
Fall Timetf20
BODY DIODE CHARACTERISTICS
Forward VoltageVSDVGS=0V, IS=0.3A1.5V

2504101957_ElecSuper-NTA7002NT1G-ES_C5224244.pdf

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Power Switching MOSFET ElecSuper NTA7002NT1G ES with Low Gate Charge and Avalanche Rated Capability

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Product Detail
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
300mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1.85Ω@10V
Gate Threshold Voltage (Vgs(th)) :
1.6V@250uA
Type :
N-Channel
Contact Supplier
Power Switching MOSFET ElecSuper NTA7002NT1G ES with Low Gate Charge and Avalanche Rated Capability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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