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Power MOSFET GOODWORK 13N50F featuring 52A pulsed current and 57W power dissipation for LED lighting
Power MOSFET GOODWORK 13N50F featuring 52A pulsed current and 57W power dissipation for LED lighting
Specifications
Drain to Source Voltage :
500V
Current - Continuous Drain(Id) :
13A
RDS(on) :
480mΩ@10V,3.3A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds) :
7pF@50V
Number :
1 N-channel
Input Capacitance(Ciss) :
1.877nF@50V
Pd - Power Dissipation :
57W
Gate Charge(Qg) :
39nC@10V
Description :
N-Channel 500V 13A 57W Through Hole ITO-220AB
Mfr. Part # :
13N50F
Model Number :
13N50F
Package :
ITO-220AB
Description

13N50F N-Channel Power MOSFET

The 13N50F is an N-Channel Power MOSFET designed with an advanced planar process, offering 100% UIS and Rg tested for enhanced reliability. It is ideal for power supply and AC/DC LED lighting applications, providing efficient power management.

Product Attributes

  • Case: Molded plastic body
  • Terminals: Solder plated, solderable per MIL-STD-750
  • Polarity: As marked
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Conditions Limit Unit
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current (Note 1) ID TC = 25°C 13 A
Continuous Drain Current (Note 1) ID TC = 100°C 8 A
Pulsed Drain Current (Note 2) IDM 52 A
Total Power Dissipation @ TC = 25°C PDTOT 57 W
Single Pulse Avalanche Energy (Note 3) EAS 608 mJ
Single Pulse Avalanche Current (Note 3) IAS 7.8 A
Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 °C
THERMAL PERFORMANCE
Junction to Case Thermal Resistance RθJC 2.2 °C/W
Junction to Ambient Thermal Resistance RθJA 62 °C/W
ELECTRICAL SPECIFICATIONS
Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 500 V
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.5 - 3.8 V
Gate Body Leakage IGSS VGS = ±30V, VDS = 0V -±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V -1 µA
Drain-Source On-State Resistance (Note 4) RDS(on) VGS = 10V, ID = 3.3A 0.37 - 0.48 Ω
Total Gate Charge (Note 5) Qg VDS = 400V, ID = 6.5A, VGS = 10V 39 nC
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 1.0MHz 1877 pF
Output Capacitance Coss 128 pF
Reverse Transfer Capacitance Crss 7 pF
Gate Resistance Rg 1.1 - 2.2 Ω
Turn-On Delay Time (Note 6) td(on) VDD = 250V, RG = 5Ω, ID = 6.5A, VGS = 10V 11 ns
Turn-On Rise Time tr 21 ns
Turn-Off Delay Time td(off) 32 ns
Turn-Off Fall Time tf 22 ns
Body-Diode Continuous Forward Current IS 13 A
Body-Diode Pulsed Current ISM 52 A
Body-Diode Forward Voltage (Note 4) VSD IS = 6.5A, VGS = 0V -1.2 V
Reverse Recovery Time (Note 4) trr IS = 6.5A, dIF/dt = 100A/µs 282 ns
Reverse Recovery Charge (Note 4) Qrr 2.9 µC

2408021727_GOODWORK-13N50F_C22463601.pdf

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Power MOSFET GOODWORK 13N50F featuring 52A pulsed current and 57W power dissipation for LED lighting

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Product Detail
Drain to Source Voltage :
500V
Current - Continuous Drain(Id) :
13A
RDS(on) :
480mΩ@10V,3.3A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
3.8V@250uA
Reverse Transfer Capacitance (Crss@Vds) :
7pF@50V
Contact Supplier
Power MOSFET GOODWORK 13N50F featuring 52A pulsed current and 57W power dissipation for LED lighting

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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