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Fast switching trench MOSFET with low gate charge and robust protection technology integrated in GOODWORK S8205A
Fast switching trench MOSFET with low gate charge and robust protection technology integrated in GOODWORK S8205A
Specifications
Configuration :
-
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
9A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
37mΩ@2.5V
Gate Threshold Voltage (Vgs(th)) :
1.2V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
140pF
Number :
2 N-Channel
Output Capacitance(Coss) :
330pF
Input Capacitance(Ciss) :
600pF
Pd - Power Dissipation :
1.25W
Gate Charge(Qg) :
11nC@4.5V
Description :
N-Channel 20V 9A 1.25W Surface Mount SOT-23-6
Mfr. Part # :
S8205A
Model Number :
S8205A
Package :
SOT-23-6
Description

Product Overview

The S8205A is a low RDS(ON) trenched N-CH MOSFET with robust protection, designed for fast switching applications. It features super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density Trench technology. This product is suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval.

Product Attributes

  • Brand: S8205A
  • Package: SOT23-6
  • Technology: Trench
  • Certifications: RoHS, Green Device Available

Technical Specifications

ParameterSymbolLimitUnitNotes
Drain-Source VoltageVDS20V
Gate-Source VoltageVGS±12V
Drain Current-ContinuousID6A
Drain Current-PulsedIDM25ANote 1
Maximum Power DissipationPD1.25W
Operating Junction and Storage Temperature RangeTJ,TSTG-55 To 150
Thermal Resistance, Junction-to-AmbientRJA100/WNote 2
Gate-Body Leakage CurrentIGSS±100nAVGS=±10V,VDS=0V
Gate Threshold VoltageVGS(th)0.5 - 1.2VVDS=VGS,ID=250µA
Drain-Source On-State ResistanceRDS(ON)20 - 25mΩVGS=4.5V, ID=4A
Drain-Source On-State ResistanceRDS(ON)27 - 37mΩVGS=2.5V, ID=3A
Forward TransconductancegFS10SVDS=5V,ID=4A
Input CapacitanceCLSS600pFVDS=8V,VGS=0V, F=1.0MHz
Output CapacitanceCOSS330pF
Reverse Transfer CapacitanceCRSS140pF
Turn-on Delay Timetd(on)18nSVDD=10V,ID=1A VGS=4V,RGEN=10Ω
Turn-on Rise Timetr5nS
Turn-Off Delay Timetd(off)43nS
Turn-Off Fall Timetf20nS
Total Gate ChargeQg11nCVDS=10V,ID=4A, VGS=4.5V
Gate-Source ChargeQgs2.3nC
Gate-Drain ChargeQgd2.5nC
Diode Forward VoltageVSD0.8 - 1.2VVGS=0V,IS=2A, Note 3
Diode Forward CurrentIS2ANote 2

2412061650_GOODWORK-S8205A_C41399469.pdf
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Fast switching trench MOSFET with low gate charge and robust protection technology integrated in GOODWORK S8205A

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Product Detail
Configuration :
-
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
9A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
37mΩ@2.5V
Gate Threshold Voltage (Vgs(th)) :
1.2V@250uA
Contact Supplier
Fast switching trench MOSFET with low gate charge and robust protection technology integrated in GOODWORK S8205A

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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