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Low Gate Charge N Channel MOSFET HUAKE HSD60N10 100V Suitable for Active Power Factor Correction
Low Gate Charge N Channel MOSFET HUAKE HSD60N10 100V Suitable for Active Power Factor Correction
Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
60A
RDS(on) :
12mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.8V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
62pF
Number :
1 N-channel
Output Capacitance(Coss) :
795pF
Pd - Power Dissipation :
91W
Input Capacitance(Ciss) :
2.2nF
Gate Charge(Qg) :
36.6nC@10V
Description :
N-Channel 100V 60A 91W Surface Mount TO-252
Mfr. Part # :
HSD60N10
Model Number :
HSD60N10
Package :
TO-252
Description

Product Overview

The HSD60N10 is a 100V N-Channel MOSFET from HUAKE Semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a low gate charge, low Crss, 100% avalanche testing, fast switching, and improved dv/dt capability, offering excellent performance with an RDS(on) of 8.5m (Typ) at VGS=10V.

Product Attributes

  • Brand: HUAKE Semiconductors
  • Product Type: N-Channel MOSFET
  • Model: HSD60N10
  • Voltage Rating: 100V
  • Package: TO-252

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
Absolute Maximum Ratings
VDSSDrain-Source Voltage100V
IDDrain Current - Continuous(Tc=25C)60*A
(Tc=100C)37.9*A
IDMDrain Current - Pulsed240*A
VGSSGate-Source Voltage20V
EASSingle Pulsed Avalanche Energy (Limit Reference Value) (Note5)175mJ
PDPower Dissipation(TC =25C)91W
Derate above 25C0.73W/C
TjOperating Junction Temperature150C
TstgStorage Temperature Range-55+150C
Thermal Characteristics
RJCThermal Resistance, Junction to Case (Note2)1.37C/W
Electrical Characteristics (Tc=25C unless otherwise noted)
Off Characteristics
BVDSSDrain-source Breakdown VoltageVGS=0V ,ID=250A100----V
IDSSZero Gate Voltage Drain CurrentVDS=100V,VGS=0V----1A
IGSSFGate-Body Leakage Current, ForwardVGS=+20V, VDS=0V----100nA
IGSSRGate-Body Leakage Current, ReverseVGS=-20V, VDS=0V-----100nA
On Characteristics (Note3)
VGS(th)Gate Threshold VoltageVDS= VGS, ID=250A1.22.02.8V
RDS(on)Static Drain-Source On-ResistanceVGS=10V, ID=30A--8.512m
VGS=6V, ID=30A--10.515m
Dynamic Characteristics (Note4)
CissInput CapacitanceVDS=25V,VGS=0V, f=1.0MHz--2200--pF
CossOutput Capacitance--795--pF
CrssReverse Transfer Capacitance--62--pF
Switching Characteristics (Note4)
td(on)Turn-On Delay TimeVDD = 50 V, ID =30 A, RG =2.5 , VGS=10V--18.8--ns
trTurn-On Rise Time--91--ns
td(off)Turn-Off Delay Time--28.5--ns
tfTurn-Off Fall Time--20.7--ns
QgTotal Gate ChargeVDS = 80 V, ID =30A, VGS = 10 V--36.6--nC
QgsGate-Source Charge--9.7--nC
QgdGate-Drain Charge--8.5--nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current (Note2)----60A
ISMMaximum Pulsed Drain-Source Diode Forward Current----240A
VSDDrain-Source Diode Forward VoltageVGS =0V,IS=30A (Note3)----1.3V
trrReverse Recovery TimeVGS =0V, IS=30A, d IF /dt=100A/s (Note3)--49--ns
QrrReverse Recovery Charge--53--nC

2410121937_HUAKE-HSD60N10_C19725802.pdf

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Low Gate Charge N Channel MOSFET HUAKE HSD60N10 100V Suitable for Active Power Factor Correction

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Product Detail
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
60A
RDS(on) :
12mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
2.8V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
62pF
Contact Supplier
Low Gate Charge N Channel MOSFET HUAKE HSD60N10 100V Suitable for Active Power Factor Correction

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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