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High Current MOSFET HUASHUO HSBA8066 with 80V Drain Source Voltage and Excellent Switching Performance
High Current MOSFET HUASHUO HSBA8066 with 80V Drain Source Voltage and Excellent Switching Performance
Specifications
Drain to Source Voltage :
80V
Current - Continuous Drain(Id) :
60A
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
8.7mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)) :
1.2V
Reverse Transfer Capacitance (Crss@Vds) :
12pF@40V
Number :
1 N-channel
Input Capacitance(Ciss) :
1.738nF@40V
Pd - Power Dissipation :
52W
Gate Charge(Qg) :
29nC@10V
Description :
N-Channel 80V 60A 52W PRPAK5x6-8L
Mfr. Part # :
HSBA8066
Model Number :
HSBA8066
Package :
PRPAK5x6-8L
Description

Product Overview

The HSBA8066 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring an 80V drain-source voltage rating, it is ideal for high-frequency switching, synchronous rectification, DC/DC converters, and motor driver applications. This MOSFET utilizes advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. It is 100% EAS guaranteed and available in a Green Device option.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced high cell density Trench technology
  • Certifications: Green Device Available

Technical Specifications

Model Parameter Rating / Conditions Units
HSBA8066 Drain-Source Voltage (VDS) 80 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID @ TC=25, VGS @ 10V) 60 A
Continuous Drain Current (ID @ TC=100, VGS @ 10V) 38 A
Pulsed Drain Current (IDM) 200 A
Single Pulse Avalanche Energy (EAS) 45 mJ
Avalanche Current (IAS) 30 A
Total Power Dissipation (PD @ TC=25) 52 W
Storage Temperature Range (TSTG) -55 to 150
Operating Junction Temperature Range (TJ) -55 to 150
Thermal Resistance Junction-Ambient (RJA) 75 /W
Thermal Resistance Junction-Case (RJC) 2.4 /W
Drain-Source Breakdown Voltage (BVDSS @ VGS=0V, ID=250uA) 80 V
HSBA8066 Static Drain-Source On-Resistance (RDS(ON), TYP @ VGS=10V, ID=10A) 7.2 m
Static Drain-Source On-Resistance (RDS(ON) @ VGS=4.5V, ID=10A) 10.5 (Typ.) m
HSBA8066 Gate Threshold Voltage (VGS(th) @ VGS=VDS, ID =250uA) 1.2 to 2.3 V
Drain-Source Leakage Current (IDSS @ VDS=64V, VGS=0V, TJ=25) 1 (Max.) uA
Gate-Source Leakage Current (IGSS @ VGS=20V, VDS=0V) 100 (Max.) nA
HSBA8066 Total Gate Charge (Qg @ VDS=40V, VGS=10V, ID=10A) 29 nC
Gate-Source Charge (Qgs) 7.7 (Typ.) nC
Gate-Drain Charge (Qgd) 5.3 (Typ.) nC
Input Capacitance (Ciss @ VDS=40V, VGS=0V, f=1MHz) 1738 (Typ.) pF
Output Capacitance (Coss @ VDS=40V, VGS=0V, f=1MHz) 317 (Typ.) pF
HSBA8066 Continuous Source Current (IS @ VG=VD=0V) 30 A
Diode Forward Voltage (VSD @ VGS=0V, IS=A, TJ=25) 1.2 (Max.) V
HSBA8066 Reverse Recovery Time (trr @ IF=10A, dI/dt=100A/s, TJ=25) 35 (Typ.) nS
HSBA8066 Reverse Recovery Charge (Qrr @ IF=10A, dI/dt=100A/s, TJ=25) 62 (Typ.) nC

Applications

  • High Frequency Switching
  • Synchronous Rectification
  • DC/DC Converters
  • Motor Drivers

Ordering Information

Part Number Package Code Packaging
HSBA8066 PRPAK5*6 3000/Tape&Reel

2410121448_HUASHUO-HSBA8066_C701052.pdf

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High Current MOSFET HUASHUO HSBA8066 with 80V Drain Source Voltage and Excellent Switching Performance

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Product Detail
Drain to Source Voltage :
80V
Current - Continuous Drain(Id) :
60A
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
8.7mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)) :
1.2V
Reverse Transfer Capacitance (Crss@Vds) :
12pF@40V
Contact Supplier
High Current MOSFET HUASHUO HSBA8066 with 80V Drain Source Voltage and Excellent Switching Performance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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