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Power MOSFET gate driver and switching device Guangdong Hottech BSS123 N channel MOSFET in SOT 23 package
Power MOSFET gate driver and switching device Guangdong Hottech BSS123 N channel MOSFET in SOT 23 package
Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
170mA
RDS(on) :
6Ω@10V,0.17A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
1.6V
Reverse Transfer Capacitance (Crss@Vds) :
6pF@25V
Number :
1 N-channel
Pd - Power Dissipation :
350mW
Input Capacitance(Ciss) :
60pF@25V
Gate Charge(Qg) :
2nC@10V
Description :
N-Channel 100V 0.17A 0.35W Surface Mount SOT-23
Mfr. Part # :
BSS123
Model Number :
BSS123
Package :
SOT-23
Description

Product Overview

The BSS123 is a high voltage N-channel MOSFET designed for various switching applications. It features a high-density cell design for extremely low RDS(ON), making it suitable for small servo motor controls, power MOSFET gate drivers, and general switching applications. This surface mount device comes in a SOT-23 package.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Model: BSS123
  • Package: SOT-23
  • Case Material: Molded Plastic
  • UL Flammability Classification: 94V-0

Technical Specifications

ParameterSymbolValueUnitConditions
Drain-source voltageVDS100V
Gate-source voltageVGS±20V
Continuous drain currentID0.17A
Pulsed drain currentIDM0.68A
Continuous Source-Drain Diode CurrentIS0.17A
Power dissipationPD0.35W
Thermal resistance from Junction to ambientRθJA357°C/W
Junction temperatureTJ150°C
Storage temperatureTSTG-55 ~+150°C
Lead Temperature for Soldering PurposesTL260°C(1/8 from case for 10 s)
Drain-Source breakdown voltageV(BR)DSS100VVGS=0V, ID=250μA
Zero gate voltage drain currentIDSS1μAVDS=100V, VGS=0V
Zero gate voltage drain currentIDSS10nAVDS=20V, VGS=0V
Gate-body leakage currentIGSS±50nAVDS=0V, VGS=±20V
Gate-threshold voltageVGS(th)1 ~ 2.8VVDS=VGS, ID=250μA
Drain-source on-resistanceRDS(ON)6ΩVGS=10V, ID=0.17A
Drain-source on-resistanceRDS(ON)10ΩVGS=4.5V, ID=0.17A
Forward trans-conductancegFS80mSVDS=10V, ID=0.17A
Diode forward voltageVSD1.4VIS=0.34A, VGS=0V

2410121946_Guangdong-Hottech-BSS123_C5190145.pdf

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Power MOSFET gate driver and switching device Guangdong Hottech BSS123 N channel MOSFET in SOT 23 package

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Product Detail
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
170mA
RDS(on) :
6Ω@10V,0.17A
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
1.6V
Reverse Transfer Capacitance (Crss@Vds) :
6pF@25V
Contact Supplier
Power MOSFET gate driver and switching device Guangdong Hottech BSS123 N channel MOSFET in SOT 23 package

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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