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10 amp 600 volt N channel MOSFET Hangzhou Silan Microelectronics SVF10N60F optimized for switching in power conversion
10 amp 600 volt N channel MOSFET Hangzhou Silan Microelectronics SVF10N60F optimized for switching in power conversion
Specifications
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
10A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
750mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
12pF
Number :
1 N-channel
Input Capacitance(Ciss) :
1.086nF
Output Capacitance(Coss) :
143pF
Pd - Power Dissipation :
50W
Gate Charge(Qg) :
28.3nC@10V
Description :
N-Channel 600V 10A 50W Through Hole TO-220F-3
Mfr. Part # :
SVF10N60F
Model Number :
SVF10N60F
Package :
TO-220F-3
Description

Product Overview

The SVF10N60F/S/K is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced design offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Origin: China
  • Certifications: Pb free, Halogen free (depending on part number)

Technical Specifications

Part NumberPackageRatingRDS(on)(typ.)@VGS=10VVDSID@TC=25CPD@TC=25CEAS
SVF10N60FTO-220F-3L10A, 600V0.75600V10A150W654mJ
SVF10N60STO-263-2L10A, 600V0.75600V10A148W654mJ
SVF10N60KTO-262-3L10A, 600V0.75600V10A148W654mJ
CharacteristicSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250A600----V
Gate Threshold VoltageVGS(th)VGS=VDS, ID=250A2.0--4.0V
Static Drain-Source On State ResistanceRDS(on)VGS=10V, ID=5.0A--0.750.9
Input CapacitanceCissVDS=25V, VGS=0V, f=1.0MHz--1086--pF
Output CapacitanceCossVDS=25V, VGS=0V, f=1.0MHz--143--pF
Reverse Transfer CapacitanceCrssVDS=25V, VGS=0V, f=1.0MHz--12.0--pF
Total Gate ChargeQgVDS=480V, ID=10A, VGS=10V--28.3--nC
Diode Forward VoltageVSDIS=10A,VGS=0V----1.3V
Reverse Recovery TimeTrrIS=10A,VGS=0V, dIF/dt=100A/S--542--ns
Reverse Recovery ChargeQrrIS=10A,VGS=0V, dIF/dt=100A/S--4.18--C

2501091110_Hangzhou-Silan-Microelectronics-SVF10N60F_C171703.pdf

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10 amp 600 volt N channel MOSFET Hangzhou Silan Microelectronics SVF10N60F optimized for switching in power conversion

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Product Detail
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
10A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
750mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Contact Supplier
10 amp 600 volt N channel MOSFET Hangzhou Silan Microelectronics SVF10N60F optimized for switching in power conversion

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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