Specifications
Configuration :
-
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
60A
Operating Temperature - :
-
RDS(on) :
8.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)) :
3V@250uA
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
310pF
Number :
1 P-Channel
Output Capacitance(Coss) :
506pF
Input Capacitance(Ciss) :
4.287nF
Pd - Power Dissipation :
52W
Gate Charge(Qg) :
90nC@10V
Description :
P-Channel 30V 60A 52W Surface Mount DFN-8(5.2x5.9)
Mfr. Part # :
HY15P03C2
Model Number :
HY15P03C2
Package :
PPAK5x6-8L
Description

Product Overview

The HY15P03C2 is a single P-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and power tool applications. It features low on-state resistance (RDS(ON)) of 4.8m typ. at VGS=-10V and 6.8m typ. at VGS=-4.5V, along with a reliable and rugged design. Halogen-free and RoHS compliant devices are available.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Material: Halogen Free (RoHS Compliant)
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSS-30V
Gate-Source VoltageVGSS20V
Maximum Junction TemperatureTJ150C
Storage Temperature RangeTSTG-55150C
Source Current-Continuous(Body Diode)ISMounted on Large Heat Sink-60A
Pulsed Drain CurrentIDM*-240A
Continuous Drain CurrentID-60-38A
Maximum Power DissipationPDTc=25C5221W
Thermal Resistance, Junction-to-AmbientRJC**2.4C/W
Thermal Resistance, Junction-to-AmbientRJA***35C/W
Single Pulsed-Avalanche EnergyEASL=0.1mH296.2mJ
Electrical Characteristics (Tc =25C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=-250A-30V
Drain-to-Source Leakage CurrentIDSSVDS=-20V,VGS=0V-1-A
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=-250A-1.0-1.6-V
Gate-Source Leakage CurrentIGSSVGS=20V,VDS=0V100nA
Drain-Source On-State ResistanceRDS(ON)*VGS=-10V,IDS=-20A4.86.0m
Drain-Source On-State ResistanceRDS(ON)*VGS=-4.5V,IDS=-20A6.88.5m
Diode Forward VoltageVSD*ISD=-20A,VGS=0V, TJ=25C-0.7-1.0V
Reverse Recovery TimetrrISD=-20A,dISD/dt=100A/s29ns
Reverse Recovery ChargeQrr54nC
Electrical Characteristics (Cont.) (Tc =25C Unless Otherwise Noted)
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz3.2
Input CapacitanceCissVGS=0V, VDS=-25V, Frequency=1.0MHz4287pF
Output CapacitanceCoss506pF
Reverse Transfer CapacitanceCrss310pF
Turn-on Delay Timetd(ON)VDD=-15V,RG=2.5, IDS=-20A,VGS=-10V12ns
Turn-on Rise TimeTr16ns
Turn-off Delay Timetd(OFF)75ns
Turn-off Fall TimeTf37ns
Gate Charge Characteristics
Total Gate ChargeQgVDS =-24V, VGS=-10V ID=-20A90nC
Gate-Source ChargeQgs7.5nC
Gate-Drain ChargeQgd18nC

2410121732_HUAYI-HY15P03C2_C123687.pdf

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P Channel Enhancement Mode MOSFET HUAYI HY15P03C2 for High Frequency Buck Converters and Power Tools

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Configuration :
-
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
60A
Operating Temperature - :
-
RDS(on) :
8.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)) :
3V@250uA
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P Channel Enhancement Mode MOSFET HUAYI HY15P03C2 for High Frequency Buck Converters and Power Tools

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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