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N Channel MOSFET 100V Fast Switching HUASHUO HSBB0056 with Low Gate Charge and Halogen Free Compliance
N Channel MOSFET 100V Fast Switching HUASHUO HSBB0056 with Low Gate Charge and Halogen Free Compliance
Specifications
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
27A
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
16mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)) :
2.2V
Reverse Transfer Capacitance (Crss@Vds) :
8pF@50V
Number :
1 N-channel
Pd - Power Dissipation :
28W
Input Capacitance(Ciss) :
849pF@50V
Gate Charge(Qg) :
17.9nC@10V
Description :
N-Channel 100V 27A 28W PRPAK3x3-8
Mfr. Part # :
HSBB0056
Model Number :
HSBB0056
Package :
PRPAK3x3-8
Description

Product Overview

The HSBB0056 is a N-Channel 100V Fast Switching MOSFET designed for high-speed circuit applications. It offers guaranteed 100% EAS, low RDS(ON), and low gate charge, making it suitable for portable equipment and battery-powered systems. This MOSFET is also RoHS and Halogen-Free compliant.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel MOSFET
  • Voltage Rating: 100V
  • Switching Speed: Fast Switching
  • Compliance: RoHS and Halogen-Free

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current1,6 27 A
ID@TC=100 Continuous Drain Current1,6 17 A
IDM Pulsed Drain Current2 80 A
EAS Single Pulse Avalanche Energy3 45 mJ
IAS Avalanche Current 30 A
PD@TC=25 Total Power Dissipation4 28 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 (t≤10s) 25 /W
RJA Thermal Resistance Junction-Ambient1 55 /W
RJC Thermal Resistance Junction-Case1 4.5 /W
Product Summary
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 V
RDS(ON),Max Static Drain-Source On-Resistance2 VGS=10V , ID=10A 16 20 mΩ
RDS(ON),Max Static Drain-Source On-Resistance2 VGS=4.5V , ID=10A 21 30 mΩ
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.2 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25°C 1 µA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=55°C 5 µA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V,f=1MHz 1 Ω
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=10A 17.9 nC
Qgs Gate-Source Charge 2.8 nC
Qgd Gate-Drain Charge 5.2 nC
Td(on) Turn-On Delay Time VDD=30V , VGS=10V , RG=6Ω, ID=1A 13 ns
Tr Rise Time 6 ns
Td(off) Turn-Off Delay Time 30 ns
Tf Fall Time 29 ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 849 pF
Coss Output Capacitance 185 pF
Crss Reverse Transfer Capacitance 8 pF
Diode Characteristics
IS Continuous Source Current1,5,6 VG=VD=0V , Force Current 27 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25°C 1.2 V

Applications

  • Portable Equipment
  • Battery Powered Systems
  • Hard Switching and High-Speed Circuit

Product Features

  • 100% EAS Guaranteed
  • Low RDS(ON)
  • Low Gate Charge
  • RoHS and Halogen-Free Compliant

Ordering Information

Part Number Package Code Packaging
HSBB0056 PRPAK3*3 3000/Tape&Reel

2410121448_HUASHUO-HSBB0056_C7543692.pdf

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N Channel MOSFET 100V Fast Switching HUASHUO HSBB0056 with Low Gate Charge and Halogen Free Compliance

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Product Detail
Drain to Source Voltage :
100V
Current - Continuous Drain(Id) :
27A
Operating Temperature - :
-55℃~+150℃@(Tj)
RDS(on) :
16mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)) :
2.2V
Reverse Transfer Capacitance (Crss@Vds) :
8pF@50V
Contact Supplier
N Channel MOSFET 100V Fast Switching HUASHUO HSBB0056 with Low Gate Charge and Halogen Free Compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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