Specifications
Drain to Source Voltage :
70V
Current - Continuous Drain(Id) :
70A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
21pF
Number :
1 N-channel
Output Capacitance(Coss) :
844pF
Input Capacitance(Ciss) :
2.908nF
Pd - Power Dissipation :
62.5W
Gate Charge(Qg) :
52nC@10V
Description :
N-Channel 70V 70A 62.5W Surface Mount TO-252-2L
Mfr. Part # :
HYG065N07NS1D
Model Number :
HYG065N07NS1D
Package :
TO-252-2L
Description

Product Overview

The HYG065N07NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)= 6m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. Available in Halogen Free and Green (RoHS Compliant) versions.

Product Attributes

  • Brand: HYMEXTA
  • Origin: China
  • Certifications: RoHS Compliant, Halogen Free

Technical Specifications

ModelPackageVDS (V)ID (A)RDS(ON) (m)Avalanche Energy (mJ)
HYG065N07NS1DTO-252-2L70706 (typ. @VGS=10V)213 (L=0.3mH)
HYG065N07NS1UTO-251-3L70706 (typ. @VGS=10V)213 (L=0.3mH)
HYG065N07NS1VTO-251-3S70706 (typ. @VGS=10V)213 (L=0.3mH)

2409271703_HUAYI-HYG065N07NS1D_C2827240.pdf

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HYG065N07NS1D MOSFET with 70 Volt Drain Source Voltage and 70 Ampere Continuous Drain Current Rating

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Drain to Source Voltage :
70V
Current - Continuous Drain(Id) :
70A
Operating Temperature - :
-55℃~+175℃
RDS(on) :
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
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HYG065N07NS1D MOSFET with 70 Volt Drain Source Voltage and 70 Ampere Continuous Drain Current Rating

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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