The MST26P05 is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Its typical applications include notebooks, load switches, and hand-held instruments.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current1 (TA =25°C) | -4.3 | A | |||
| ID | Continuous Drain Current1 (TA =70°C) | -3.5 | A | |||
| IDM | Pulsed Drain Current2 (TA =25°C) | -16 | A | |||
| PD | Power Dissipation3 (TA =25°C) | 1.1 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| RθJA | Maximum Junction-to-Ambient1 | 110 | °C/W | |||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250µA | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250µA | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-3.0A | 11 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25°C VDS =-24V, VGS =0V, TJ =55°C | -1 -5 | µA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-10V, ID =-4.0A VGS =-4.5V, ID =-3.0A | 52 75 | mΩ | ||
| VSD | Diode Forward Voltage2 | IS =-1.6A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current1,4 (Diode) | -4.3 | A | |||
| ISM | Pulsed Source Current2,4 (Diode) | VG =VD =0V, Force Current | -16 | A | ||
| Qg | Total Gate Charge2 | 6.4 | nC | |||
| Qgs | Gate-Source Charge | 2.3 | nC | |||
| Qgd | Gate-Drain Charge | VDS =-15V ID =-3.0A VGS =-4.5V | 1.9 | nC | ||
| td(on) | Turn-On Delay Time2 | 2.8 | ns | |||
| tr | Rise Time | 8.4 | ns | |||
| td(off) | Turn-Off Delay Time | 39 | ns | |||
| tf | Fall Time | VDS =-15V ID =-3.0A VGS =-10V RG =3.3Ω | 6 | ns | ||
| CISS | Input Capacitance | 583 | pF | |||
| COSS | Output Capacitance | 100 | pF | |||
| CRSS | Reverse Transfer Capacitance | VDS =-15V VGS =0V f =1.0MHz | 80 | pF |
Notes: