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Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions
Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions
Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
4.9A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
1.2V@250uA
Type :
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
59pF
Number :
1 N-Channel + 1 P-Channel
Output Capacitance(Coss) :
74pF
Input Capacitance(Ciss) :
1.048nF
Pd - Power Dissipation :
1.5W
Gate Charge(Qg) :
11.6nC@4.5V
Description :
N-Channel+P-Channel Array 20V 4.9A 1.5W Surface Mount DFNWB-8-EP(2x3)
Mfr. Part # :
MTC3587DL8
Model Number :
MTC3587DL8
Package :
DFNWB-8-EP(2x3)
Description

Product Overview

The CYStek MTC3587DL8 is an N- and P-Channel Enhancement Mode Power MOSFET designed for simple drive requirements, low gate charge, low on-resistance, and fast switching speeds. It features Pb-free lead plating and a halogen-free package, making it an environmentally friendly choice. This device is suitable for various power management applications.

Product Attributes

  • Brand: CYStek
  • Certifications: Pb-free lead plating, Halogen-free package, RoHS compliant
  • Environmentally friendly grade: S for RoHS compliant products, G for RoHS compliant and green compound products

Technical Specifications

DevicePackageBVDSS (V)ID @ TA=25C (A)RDSON (TYP.) (m)Ordering Information
MTC3587DL8 (N-CH)DFNWB32-8L-B204.9 (VGS=4.5V)32 (VGS=4.5V)MTC3587DL8-0-T1-G (3000 pcs / tape & reel)
MTC3587DL8 (P-CH)-20-3.9 (VGS=-4.5V)50 (VGS=-4.5V)
ParameterSymbolN-channel (Q1) LimitP-channel (Q2) LimitUnitTest Conditions
Drain-Source Breakdown VoltageBVDSS20-20VVGS=0V, ID=250A
Gate-Source VoltageVGS8V
Continuous Drain Current @TA=25 CID4.9-3.9ANote 1
Continuous Drain Current @TA=70 CID3.9-3.1ANote 1
Pulsed Drain CurrentIDM30-23ANote 2
Maximum Power Dissipation @TA=25CPD1.5WNote 1
Maximum Power Dissipation @TA=70CPD0.96WNote 1
Operating Junction and Storage TemperatureTj, Tstg-55~+150C
Thermal Resistance, Junction-to-AmbientRJA85C/WNote 1
Thermal Resistance, Junction-to-CaseRJC25C/W
Static Drain-Source On-State ResistanceRDS(ON)32 (VGS=4.5V)50 (VGS=-4.5V)mID=4.4A (N-CH), ID=-3.2A (P-CH)
43 (VGS=2.5V)62 (VGS=-2.5V)mID=4.1A (N-CH), ID=-2.5A (P-CH)
62 (VGS=1.8V)81 (VGS=-1.8V)mID=1.9A (N-CH), ID=-1A (P-CH)
Gate Charge (Total)Qg5.9 (Typ.)11.6 (Typ.)nCVDS=10V, ID=4.4A (N-CH), ID=-3.2A (P-CH), VGS=4.5V (N-CH), VGS=-4.5V (P-CH)

Note: 1.Surface mounted on 1 in copper pad of FR-4 board, t5 sec. 2.Pulse width limited by maximum junction temperature.


2410121913_CYSTECH-MTC3587DL8_C373365.pdf

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Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions

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Product Detail
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
4.9A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
1.2V@250uA
Type :
N-Channel + P-Channel
Contact Supplier
Halogen Free and Pb Free Lead Plating Power MOSFET CYSTECH MTC3587DL8 for Power Management Solutions

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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