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220FL N channel MOSFET BLUE ROCKET BRF10N60 for high voltage DC DC converter and power switch design
220FL N channel MOSFET BLUE ROCKET BRF10N60 for high voltage DC DC converter and power switch design
Specifications
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
9.5A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
730mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
24pF
Number :
1 N-channel
Output Capacitance(Coss) :
215pF
Input Capacitance(Ciss) :
2.04nF
Pd - Power Dissipation :
50W
Gate Charge(Qg) :
45nC@10V
Description :
N-Channel 600V 9.5A 50W Through Hole TO-220FL
Mfr. Part # :
BRF10N60
Model Number :
BRF10N60
Package :
TO-220FL
Description

Product Overview

The BRFL10N60 is an N-channel MOSFET in a TO-220FL plastic package, designed for high efficiency switching DC/DC converters and power switches. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for demanding power applications.

Product Attributes

  • Brand: FSBREC
  • Package Type: TO-220FL
  • Channel Type: N-Channel
  • Lead Free: Yes (indicated by temperature profile for dip soldering)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 600 V
Drain Current ID(Tc=25) 9.5 A
Drain Current ID(Tc=100) 5.7 A
Drain Current - Pulsed IDM 38 A
Gate-Source Voltage VGSS 20 V
Single Pulsed Avalanche Energy EAS 700 mJ
Repetitive Avalanche Energy EAR 15.6 mJ
Avalanche Current IAR 9.5 A
Thermal Resistance, Junction to Case RJC 2.5 /W
Thermal Resistance, Junction to Ambient RJA 62.5 /W
Power Dissipation PD(Tc=25) 50 W
Operating and Storage Temperature Range TJ,TSTG -55 150
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 600 V
Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 1 A
VDS=480V, TC=125 100 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 2.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=4.75A 0.6 0.73
Forward Transconductance gFS VDS=40V, ID=4.75A 8.0 S
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=9.5A 1.4 V
Total Gate Charge Qg ID=10A, VDS=480V, VGS=10V 45 nC
Gate-to-Source Charge Qgs 7.5 nC
Gate-to-Drain Charge Qgd 18.5 nC
Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz 1570 2040 pF
Output Capacitance Coss 166 215 pF
Reverse Transfer Capacitance Crss 18 24 pF
Turn-On Delay Time td(on) VDD=300V, ID=9.5A, RG=25 23 55 ns
Turn-On Rise Time tr 69 150 ns
Turn-Off Delay Time td(off) 144 300 ns
Turn-Off Fall Time tf 77 165 ns

Marking Instructions:

  • BR: Company Code
  • 10N60: Product Type Code
  • ****: Lot No. Code (changes with Lot No.)

Packaging Specifications:

  • Package Type: TO-220FL
  • Units/Tube: 50
  • Tubes/Inner Box: 20
  • Units/Inner Box: 1,000
  • Inner Boxes/Outer Box: 5
  • Units/Outer Box: 5,000

Resistance to Soldering Heat Test Conditions:

  • Temperature: 2705
  • Time: 101 sec.

Temperature Profile for Dip Soldering (Pb-Free):

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2555, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

2410121238_BLUE-ROCKET-BRF10N60_C358402.pdf

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220FL N channel MOSFET BLUE ROCKET BRF10N60 for high voltage DC DC converter and power switch design

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Product Detail
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
9.5A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
730mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Contact Supplier
220FL N channel MOSFET BLUE ROCKET BRF10N60 for high voltage DC DC converter and power switch design

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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