Specifications
Drain to Source Voltage :
80V
Current - Continuous Drain(Id) :
195A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
305pF
Number :
1 N-channel
Output Capacitance(Coss) :
2.44nF
Input Capacitance(Ciss) :
6.35nF
Pd - Power Dissipation :
227W
Gate Charge(Qg) :
128nC@10V
Description :
N-Channel 80V 195A 227W Through Hole TO-220
Mfr. Part # :
BRCS035N08SHRA
Model Number :
BRCS035N08SHRA
Package :
TO-220
Description

Product Overview

The BRCS035N08SHRA is an N-channel MOSFET housed in a TO-220 plastic package. It features ultra-low on-resistance and fast switching speeds, making it suitable for applications such as BMS appliances, high-power inverter systems, and general power appliances. This device offers high performance with a drain-source voltage of 80V and a continuous drain current of 195A at 25.

Product Attributes

  • Brand: FS (implied by datasheet URL)
  • Package Type: TO-220 Plastic Package
  • Channel Type: N-Channel MOSFET
  • Marking Code: BR **** 035N08SH (BR: Company Code, 035N08SH: Product Type, ****: Lot No. Code)

Technical Specifications

Parameter Symbol Rating Unit
Drain-Source Voltage VDS 80 V
Drain Current (Tc=25) ID(Tc=25) 195 A
Pulsed Drain Current IDM 400 A
Gate-Source Voltage VGS 20 V
Single Pulsed Avalanche Energy (L=0.5mH) EAS 1200 mJ
Avalanche Current IAS 47.5 A
Total Power Dissipation (Tc=25) PD(Tc=25) 227 W
Junction and Storage Temperature Range TJ,TSTG -55 to 150
Thermal Resistance-Junction to Ambient (t 10s) RJA 15 /W
Thermal Resistance-Junction to Ambient (Steady-State) RJA 60 /W
Thermal Resistance-Junction to Case (Steady-State) RJC 0.55 /W
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 80 94 V
Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 2 2.9 4 V
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=30A 2.9 3.5 m
Forward On Voltage VSD VGS=0V, IS=1A 1.2 V
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 6350 pF
Output Capacitance Coss VDS=25V, VGS=0V, f=1MHz 2440 pF
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz 305 pF
Gate Resistance Rg f=1MHz 1.6
Total Gate Charge Qg VGS=10V, VDS=40V, ID=20A 128 nC
Gate Source Charge Qgs VGS=10V, VDS=40V, ID=20A 36 nC
Gate Drain Charge Qgd VGS=10V, VDS=40V, ID=20A 23 nC
Turn-On Delay Time td(on) VGS=10V, VDS=40V, RL=2, RGEN=3 25 ns
Turn-On Rise Time tr VGS=10V, VDS=40V, RL=2, RGEN=3 19 ns
Turn-Off Delay Time td(off) VGS=10V, VDS=40V, RL=2, RGEN=3 56 ns
Turn-Off Fall Time tf VGS=10V, VDS=40V, RL=2, RGEN=3 18 ns

Packaging Specifications

BULK Package

Package Type Units/Bag Bags/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (unit: mm)
TO-220/F 200 10 2,000 5 10,000 560245195

TUBE Package

Package Type Units/Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (unit: mm)
TO-220/F 50 20 1,000 5 5,000 575290180

Soldering Profile

Temperature Profile for Dip Soldering (Pb-Free)

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2555, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temp.: 2705
  • Time: 101 sec.

2410121231_BLUE-ROCKET-BRCS035N08SHRA_C22449014.pdf

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High Power MOSFET BLUE ROCKET BRCS035N08SHRA with 80V Drain Source Voltage and Ultra Low On Resistance

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Drain to Source Voltage :
80V
Current - Continuous Drain(Id) :
195A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
4V@250uA
Type :
N-Channel
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High Power MOSFET BLUE ROCKET BRCS035N08SHRA with 80V Drain Source Voltage and Ultra Low On Resistance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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