MachineU > China Products > Electrical Equipment & Supplies
N Channel Enhancement Mode MOSFET BORN AO3400A with Advanced Trench Technology and Low On Resistance
N Channel Enhancement Mode MOSFET BORN AO3400A with Advanced Trench Technology and Low On Resistance
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.8A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
32mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)) :
1.4V@250uA
Number :
1 N-channel
Input Capacitance(Ciss) :
823pF@15V
Pd - Power Dissipation :
1.4W
Description :
N-Channel 30V 5.8A 1.4W Surface Mount SOT-23
Mfr. Part # :
AO3400A
Model Number :
AO3400A
Package :
SOT-23
Description

Product Overview

The AO3400A is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is designed for efficient power management applications. It is ROHS compliant and comes in a SOT-23 package.

Product Attributes

  • Type: MOSFET
  • Channel Type: N-Channel
  • Mode: Enhancement-Mode
  • Technology: Advanced trench process
  • Design: High Density Cell Design for Ultra Low On-Resistance
  • Compliance: ROHS
  • Package: SOT-23

Technical Specifications

Characteristic Symbol Min Typ Max Unit
Drain-Source Voltage BVDSS 30 V
Gate- Source Voltage VGS 12 V
Drain Current (continuous) ID 5.8 A
Drain Current (pulsed) IDM 30 A
Total Device Dissipation (TA=25) PD 1400 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 +150
Drain-Source Breakdown Voltage (ID = 250uA,VGS=0V) BVDSS 30 V
Gate Threshold Voltage (ID = 250uA,VGS= VDS) VGS(th) 0.7 1.4 V
Diode Forward Voltage Drop (IS= 1 A,VGS=0V) VSD 0.77 1 V
Zero Gate Voltage Drain Current (VGS=0V, VDS= 24V ) IDSS 1 uA
Gate Body Leakage (VGS=+12V, VDS=0V) IGSS +100 nA
Static Drain-Source On-State Resistance (ID= 5.8A,VGS= 10V ) RDS(ON) 29 32 m
Static Drain-Source On-State Resistance (ID= 5 A,VGS= 4.5 V) RDS(ON) 32 36 m
Static Drain-Source On-State Resistance (ID= 4 A,VGS= 2.5 V) RDS(ON) 40 52 m
Input Capacitance (VGS=0V, VDS= 15 V,f=1MHz) CISS 823 pF
Output Capacitance (VGS=0V, VDS= 15 V,f=1MHz) COSS 99 pF
Turn-ON Time (VDS= 15 V, RGEN=3, VGS=10V) t(on) 3.3 ns
Turn-OFF Time (VDS= 15 V, RGEN=3, VGS=10V) t(off) 26.3 ns

Package Outline: SOT-23

Dimensions: (UNIT): mm


2410010103_BORN-AO3400A_C344010.pdf

Send your message to this supplier
Send Now

N Channel Enhancement Mode MOSFET BORN AO3400A with Advanced Trench Technology and Low On Resistance

Ask Latest Price
Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.8A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
32mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)) :
1.4V@250uA
Number :
1 N-channel
Contact Supplier
N Channel Enhancement Mode MOSFET BORN AO3400A with Advanced Trench Technology and Low On Resistance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single FETs, MOSFETs
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement