MachineU > China Products > Electrical Equipment & Supplies
N Channel Enhancement Mode MOSFET BORN BSS138 Featuring Low On Resistance and 12V Gate Source Voltage
N Channel Enhancement Mode MOSFET BORN BSS138 Featuring Low On Resistance and 12V Gate Source Voltage
Specifications
Configuration :
-
Drain to Source Voltage :
50V
Current - Continuous Drain(Id) :
500mA
Operating Temperature - :
-
RDS(on) :
1Ω@10V,0.5A
Gate Threshold Voltage (Vgs(th)) :
1.5V
Reverse Transfer Capacitance (Crss@Vds) :
1.5pF@30V
Number :
1 N-channel
Input Capacitance(Ciss) :
23pF@30V
Pd - Power Dissipation :
-
Gate Charge(Qg) :
910pC@30V
Description :
N-Channel 50V 0.5A Surface Mount SOT-23
Mfr. Part # :
BSS138
Model Number :
BSS138
Package :
SOT-23
Description

Product Overview

The BSS138 is a high-performance N-Channel Enhancement-Mode MOSFET designed for various switching applications. It features low RDS(on) at 10V VGS, 3.3V logic level control, and is housed in a compact SOT23 package. This RoHS compliant component is ideal for LED lighting applications and ON/OFF switching in networking equipment.

Product Attributes

  • Brand: BSS138 (Implied from datasheet context)
  • Package Type: SOT23
  • Compliance: PbFree, RoHS Compliant
  • Transistor Type: N-Channel Enhancement-Mode MOSFET

Technical Specifications

Parameter Condition Min Typ Max Unit
Gate-Source Voltage (Common Ratings) 12 V
Drain-Source Breakdown Voltage (V(BR)DSS) VGS=0V, ID=250A 50 V
Maximum Junction Temperature (TJ) (Common Ratings) 150 C
Storage Temperature Range (TSTG) (Common Ratings) -50 150 C
Pulse Drain Current (ID) TA=25C, Mounted on Large Heat Sink 1.8 A
Continuous Drain Current (ID) TA=25C 0.5 A
Continuous Drain Current (ID) TA=70C 0.4 A
Maximum Power Dissipation (PD) TA=25C 0.3 W
Maximum Power Dissipation (PD) TA=70C 0.2 W
Thermal Resistance Junction-Ambient (JA) 400 C/W
Zero Gate Voltage Drain Current (IDSS) VDS=50V, VGS=0V (TA=25) 1 A
Zero Gate Voltage Drain Current (IDSS) VDS=40V, VGS=0V (TA=125) 100 uA
Gate-Body Leakage Current (IGSS) VGS=12V, VDS=0V 100 nA
Gate Threshold Voltage (VGS(TH)) VDS=VGS, ID=250A 0.6 1.0 1.5 V
Drain-Source On-State Resistance (RDS(ON)) VGS=10V, ID=0.5A 1.0 2
Drain-Source On-State Resistance (RDS(ON)) VGS=4.5V, ID=0.3A 1.2 2.5
Drain-Source On-State Resistance (RDS(ON)) VGS=3.3V, ID=0.2A 1.6 4
Input Capacitance (Ciss) VDS=30V, VGS=0V, f=1MHz 23 pF
Output Capacitance (Coss) 3.8 pF
Reverse Transfer Capacitance (Crss) 1.5 pF
Total Gate Charge (Qg) VDS=30V, ID=0.5A, VGS=10V 0.91 nC
Gate Source Charge (Qgs) 0.18 nC
Gate Drain Charge (Qgd) 0.3 nC
Turn on Delay Time (td(on)) VDD=30V, ID=0.3A, RG=3.3, VGS=10V 6 ns
Turn on Rise Time (tr) 3.5 ns
Turn Off Delay Time (td(off)) 20 ns
Turn Off Fall Time (tf) 5.9 ns
Source Drain Current (ISD) Body Diode, TA=25 0.2 A
Forward on voltage (VSD) Tj=25, ISD=0.5A, VGS=0V 0.78 1.2 V

Order Information

Product Package Marking Packing Min Unit Quantity
BSS138 SOT23 KN 3000PCS/Reel 3000PCS

2410121608_BORN-BSS138_C431507.pdf

Send your message to this supplier
Send Now

N Channel Enhancement Mode MOSFET BORN BSS138 Featuring Low On Resistance and 12V Gate Source Voltage

Ask Latest Price
Product Detail
Configuration :
-
Drain to Source Voltage :
50V
Current - Continuous Drain(Id) :
500mA
Operating Temperature - :
-
RDS(on) :
1Ω@10V,0.5A
Gate Threshold Voltage (Vgs(th)) :
1.5V
Contact Supplier
N Channel Enhancement Mode MOSFET BORN BSS138 Featuring Low On Resistance and 12V Gate Source Voltage

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single FETs, MOSFETs
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement