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P Channel MOSFET ElecSuper ESPM3021 8 TR designed for DC DC conversion and power switching solutions
P Channel MOSFET ElecSuper ESPM3021 8 TR designed for DC DC conversion and power switching solutions
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
12A
RDS(on) :
9.5mΩ@10V;14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
1.5V@250uA
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
200pF@15V
Pd - Power Dissipation :
3.1W
Input Capacitance(Ciss) :
1.78nF@15V
Gate Charge(Qg) :
46nC@10V
Description :
P-Channel 30V 12A 3.1W Surface Mount SOP-8
Mfr. Part # :
ESPM3021-8/TR
Model Number :
ESPM3021-8/TR
Package :
SOP-8
Description

Product Overview

The ESPM3021-8/TR is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.

Product Attributes

  • Brand: SuperMOS
  • Part Number: ESPM3021-8/TR
  • Package: SOP8
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Origin: www.elecsuper.com

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageBVDSSVGS=0V, ID=-250uA-30V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentIDTA=25°C-12A
Continuous Drain CurrentIDTA=100°C-10A
Maximum Power DissipationPDTA=25°C3.1W
Maximum Power DissipationPDTA=100°C2.0W
Pulsed Drain CurrentIDM-60A
Avalanche Current, Single PulsedIASEAS condition£¯Tj=25°C,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω-22A
Avalanche Energy, Single PulsedEASEAS condition£¯Tj=25°C,VDD=-30V,VG=-10V,L=0.3mH,Rg=25Ω72mJ
Operating Junction TemperatureTJ150°C
Storage Temperature RangeTstg-55+150°C
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-30V
Zero Gate Voltage Drain CurrentIDSSVDS=-30V, VGS=0V-1uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±20V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-1-1.5-2V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-12A9.513mΩ
Drain-to-source On-resistanceRDS(on)VGS=-4.5V, ID=-7A1417mΩ
Forward TransconductancegFSVDS=-5.0V, ID=-10A40S
Input CapacitanceCISSVGS=0V, f=1MHz, VDS =-15V1780pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS =-15V235pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS =-15V200pF
Gate ResistanceRgf=1MHz6.0Ω
Total Gate ChargeQG(TOT)VGS=-10V, VDS=-15V, ID=-15A46nC
Gate-to-Source ChargeQGSVGS=-10V, VDS=-15V, ID=-15A1.0nC
Gate-to-Drain ChargeQGDVGS=-10V, VDS=-15V, ID=-15A1.4nC
Turn-On Delay Timetd(ON)VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω8ns
Rise TimetrVGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω27ns
Turn-Off Delay Timetd(OFF)VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω68ns
Fall TimetfVGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω39ns
Forward VoltageVSDVGS=0V, IS=-1.0A-0.7-1V

2504101957_ElecSuper-ESPM3021-8-TR_C42412331.pdf

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P Channel MOSFET ElecSuper ESPM3021 8 TR designed for DC DC conversion and power switching solutions

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
12A
RDS(on) :
9.5mΩ@10V;14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
1.5V@250uA
Type :
P-Channel
Reverse Transfer Capacitance (Crss@Vds) :
200pF@15V
Contact Supplier
P Channel MOSFET ElecSuper ESPM3021 8 TR designed for DC DC conversion and power switching solutions

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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