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Power Switch Device SOT23 Package ElecSuper SI2302DS-T1-GE3-ES N Channel MOSFET Pb Free Halogen Free
Power Switch Device SOT23 Package ElecSuper SI2302DS-T1-GE3-ES N Channel MOSFET Pb Free Halogen Free
Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
3.3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
700mV@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
28pF
Number :
1 N-channel
Output Capacitance(Coss) :
35pF
Input Capacitance(Ciss) :
200pF
Pd - Power Dissipation :
400mW
Gate Charge(Qg) :
3nC@4.5V
Description :
N-Channel 20V 3.3A 400mW Surface Mount SOT-23
Mfr. Part # :
SI2302DS-T1-GE3-ES
Model Number :
SI2302DS-T1-GE3-ES
Package :
SOT-23
Description

Product Overview

The SI2302DS-T1-GE3-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen free.

Product Attributes

  • Brand: ElecSuper
  • Part Number: SI2302DS-T1-GE3-ES
  • Package: SOT-23
  • Marking: 2302
  • Material: Halogen free
  • Packing: Tape & Reel
  • Quantity per reel: 3,000 PCS
  • Flammability Rating: UL 94V-0
  • Reel Size: 7 inches
  • Certifications: Pb-free

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageBVDSSVGS=0V, ID=250uA20V
Gate-Source VoltageVGS±12V
Continuous Drain CurrentIDTA=253.3A
TA=1002.1A
Maximum Power DissipationPD0.9mW
Pulsed Drain CurrentIDM13.2A
Operating Junction TemperatureTJ150°C
Lead TemperatureTL260°C
Storage Temperature RangeTstg-55150°C
Thermal Characteristics
Junction-to-Ambient Thermal ResistanceRθJASingle Operation138°C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA20V
Zero Gate Voltage Drain CurrentIDSSVDS=20V, VGS=0V1.0uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±12V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA0.40.71.0V
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=3A4555mΩ
VGS=2.5V, ID=2A6285mΩ
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=10V200pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=10V35pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=10V28pF
Total Gate ChargeQG(TOT)VGS=4.5V, VDS=10V, ID=2A3nC
Gate-to-Source ChargeQGSVGS=4.5V, VDS=10V, ID=2A0.5nC
Gate-to-Drain ChargeQGDVGS=4.5V, VDS=10V, ID=2A0.7nC
Turn-On Delay Timetd(ON)VGS=4.5V, VDS=10V, ID=2A, RG=3Ω3ns
Rise TimetrVGS=4.5V, VDS=10V, ID=2A, RG=3Ω11ns
Turn-Off Delay Timetd(OFF)VGS=4.5V, VDS=10V, ID=2A, RG=3Ω20ns
Fall TimetfVGS=4.5V, VDS=10V, ID=2A, RG=3Ω8ns
Forward VoltageVSDVGS=0V, IS=3A1.5V

2504101957_ElecSuper-SI2302DS-T1-GE3-ES_C5224184.pdf

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Power Switch Device SOT23 Package ElecSuper SI2302DS-T1-GE3-ES N Channel MOSFET Pb Free Halogen Free

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Product Detail
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
3.3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
700mV@250uA
Type :
N-Channel
Contact Supplier
Power Switch Device SOT23 Package ElecSuper SI2302DS-T1-GE3-ES N Channel MOSFET Pb Free Halogen Free

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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