MachineU > China Products > Electrical Equipment & Supplies
DC DC Conversion Using ElecSuper 2N7002K N Channel Enhancement MOSFET with Low Gate Charge Technology
DC DC Conversion Using ElecSuper 2N7002K N Channel Enhancement MOSFET with Low Gate Charge Technology
Specifications
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
300mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1.85Ω@10V
Gate Threshold Voltage (Vgs(th)) :
1.6V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
4pF
Number :
1 N-channel
Output Capacitance(Coss) :
11pF
Input Capacitance(Ciss) :
28pF
Pd - Power Dissipation :
350mW
Gate Charge(Qg) :
1.8nC@4.5V
Description :
N-Channel 60V 300mA 350mW Surface Mount SOT-23
Mfr. Part # :
2N7002K
Model Number :
2N7002K
Package :
SOT-23
Description

Product Overview

The 2N7002K is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. This is a standard, Pb-free product.

Product Attributes

  • Brand: SuperMOS
  • Model: 2N7002K
  • Package: SOT-23
  • Material: Halogen free
  • Flammability Rating: UL 94V-0
  • Certifications: Pb-free

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings
Drain-Source VoltageBVDSS60V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentIDTA=250.3A
Continuous Drain CurrentIDTA=1000.2A
Maximum Power DissipationPD350mW
Pulsed Drain CurrentIDM1.2A
Operating Junction TemperatureTJ150°C
Lead TemperatureTL260°C
Storage Temperature RangeTstg-55to150°C
Junction-to-Ambient Thermal ResistanceRθJASingle Operation357°C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA60V
Zero Gate Voltage Drain CurrentIDSSVDS=60V, VGS=0V1.0uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±20V±10uA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250uA1.01.62.0V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=0.3A1.852.2Ω
Drain-to-source On-resistanceRDS(on)VGS=4.5V, ID=0.2A2.053.0Ω
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=25V28pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=25V11pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=25V4pF
Total Gate ChargeQG(TOT)VGS=4.5V, VDS=10V, ID=0.3A1.8nC
Gate-to-Source ChargeQGSVGS=4.5V, VDS=10V, ID=0.3A0.3nC
Gate-to-Drain ChargeQGDVGS=4.5V, VDS=10V, ID=0.3A0.6nC
Turn-On Delay Timetd(ON)VGS=10V, VDS=10V, ID=0.2A, RG=10Ω2ns
Rise TimetrVGS=10V, VDS=10V, ID=0.2A, RG=10Ω15ns
Turn-Off Delay Timetd(OFF)VGS=10V, VDS=10V, ID=0.2A, RG=10Ω7ns
Fall TimetfVGS=10V, VDS=10V, ID=0.2A, RG=10Ω20ns
Forward VoltageVSDVGS=0V, IS=0.3A1.5V

2504101957_ElecSuper-2N7002K_C5224225.pdf

Send your message to this supplier
Send Now

DC DC Conversion Using ElecSuper 2N7002K N Channel Enhancement MOSFET with Low Gate Charge Technology

Ask Latest Price
Product Detail
Drain to Source Voltage :
60V
Current - Continuous Drain(Id) :
300mA
Operating Temperature - :
-55℃~+150℃
RDS(on) :
1.85Ω@10V
Gate Threshold Voltage (Vgs(th)) :
1.6V@250uA
Type :
N-Channel
Contact Supplier
DC DC Conversion Using ElecSuper 2N7002K N Channel Enhancement MOSFET with Low Gate Charge Technology

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single FETs, MOSFETs
MachineU China Products Electrical Equipment & Supplies
Contact Supplier
Submit Requirement