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Load Switch and DC DC Converter MOSFET FMS Formosa Microsemi AS3423B with Trench Process Technology
Load Switch and DC DC Converter MOSFET FMS Formosa Microsemi AS3423B with Trench Process Technology
Specifications
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
1.5V@250uA
Number :
1 P-Channel
Input Capacitance(Ciss) :
500pF@10V
Pd - Power Dissipation :
1W
Description :
P-Channel 20V 3A 1W Surface Mount SOT-23-3L
Mfr. Part # :
AS3423B
Model Number :
AS3423B
Package :
SOT-23-3L
Description

Product Overview

The AS3423B is a P-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for applications such as load switches for portable devices and DC/DC converters.

Product Attributes

  • Brand: Formosa MS
  • Package: SOT-23-3L
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ProductV(BR)DSSRDS(on)MAXIDPackageDocument IDIssued DateRevised DateRevision
AS3423B-20V90m@-4.5V-3ASOT-23-3LFM-31503212003/03/082012/05/16D
AS3423B-20V110m@-2.5V-3ASOT-23-3LFM-31503212003/03/082012/05/16D
ParameterSymbolTest ConditionMin.Typ.Max.Unit
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-20V
Zero gate voltage drain currentIDSSVDS =-16V,VGS = 0V-1A
Gate-body leakage currentIGSSVGS =10V, VDS = 0V100nA
Gate threshold voltageVGS(th)VDS =VGS, ID =-250A-0.5-1.5V
Drain-source on-resistanceRDS(on)VGS =-4.5V, ID =-3A7090m
Drain-source on-resistanceRDS(on)VGS =-2.5V, ID =-2A90110m
Input CapacitanceCissVDS =-10V,VGS =0V,f =1MHz500pF
Output CapacitanceCossVDS =-10V,VGS =0V,f =1MHz100pF
Turn-on delay timetd(on)VDD=-10V, ID =-3A, RGEN=610nS
Turn-off delay timetd(off)VDD=-10V, ID =-3A, RGEN=660nS
Diode Forward voltageVDSVGS =0V, IS=-0.75A-1.5V
ParameterSymbolValueUnit
Continuous Drain CurrentID-3A
Pulsed Drain CurrentIDM-10A
Power DissipationPD1W
Junction TemperatureTJ150
Storage TemperatureTSTG-55 ~ +150
Gate-Source VoltageVGS10V
Drain-Source VoltageVDS-20V

2410121513_FMS-Formosa-Microsemi-AS3423B_C341542.pdf

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Load Switch and DC DC Converter MOSFET FMS Formosa Microsemi AS3423B with Trench Process Technology

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Product Detail
Drain to Source Voltage :
20V
Current - Continuous Drain(Id) :
3A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) :
1.5V@250uA
Number :
1 P-Channel
Contact Supplier
Load Switch and DC DC Converter MOSFET FMS Formosa Microsemi AS3423B with Trench Process Technology

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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