Specifications
Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
40mA
RDS(on) :
150Ω@0V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
-
Reverse Transfer Capacitance (Crss@Vds) :
9pF
Number :
1 N-channel
Output Capacitance(Coss) :
13pF
Input Capacitance(Ciss) :
62pF@5V
Pd - Power Dissipation :
500mW
Gate Charge(Qg) :
8nC
Description :
N-Channel 600V 40mA 0.5W Surface Mount SOT-23
Mfr. Part # :
DMZ6012E
Model Number :
DMZ6012E
Package :
SOT-23
Description

DMZ6012E Depletion-Mode Power MOSFET

The DMZ6012E is a depletion-mode (normally-on) power MOSFET from ARK Microelectronics, featuring ESD improved capability, proprietary advanced planar technology, and a rugged polysilicon gate cell structure. It offers fast switching speeds and is RoHS compliant with a halogen-free option available. This MOSFET is suitable for applications such as normally-on switches, SMPS start-up circuits, linear amplifiers, converters, constant current sources, and telecom equipment.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Origin: China (implied by company address)
  • Certifications: RoHS Compliant, Halogen-free available

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Conditions
Drain-to-Source Breakdown VoltageBVDSX600----VVGS=-5V, ID=250A
Continuous Drain CurrentID----0.04ATA=25
Pulsed Drain CurrentIDM----0.16ATA=25
Power DissipationPD----0.50WTA=25
Gate-to-Source VoltageVGS----20V--
Static Drain-to-Source On-ResistanceRDS(ON)--110150VGS=0VID=50mA [3]
Gate-to-Source Cut-off VoltageVGS(OFF)-3.3---1.5VVDS =3V, ID=8A
Input CapacitanceCISS--62--pFVGS=-5V VDS=25V f=1.0MHZ
Oput CapacitanceCOSS--13--pFVGS=-5V VDS=25V f=1.0MHZ
Reverse Transfer CapacitanceCRSS--9--pFVGS=-5V VDS=25V f=1.0MHZ
Total Gate ChargeQG--8--nCVGS=-5V~5V VDS=300V, ID=7mA
Turn-on Delay Timetd(ON)--10--nsVGS = -5V~5V VDD = 300V, ID=7mA RG = 20
Rise Timetrise--22--nsVGS = -5V~5V VDD = 300V, ID=7mA RG = 20
Turn-off Delay Timetd(OFF)--35--nsVGS = -5V~5V VDD = 300V, ID=7mA RG = 20
Fall Timetfall--210--nsVGS = -5V~5V VDD = 300V, ID=7mA RG = 20
Diode Forward VoltageVSD----1.2VISD =100 mA, VGS = -10 V

2410121502_ARK-micro-DMZ6012E_C3031423.pdf

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Depletion Mode Power MOSFET ARK micro DMZ6012E with fast switching speed and ESD improved capability

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Drain to Source Voltage :
600V
Current - Continuous Drain(Id) :
40mA
RDS(on) :
150Ω@0V
Operating Temperature - :
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)) :
-
Reverse Transfer Capacitance (Crss@Vds) :
9pF
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Depletion Mode Power MOSFET ARK micro DMZ6012E with fast switching speed and ESD improved capability

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier
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