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30V N Channel MOSFET power transistor ASDsemi ASDM3400ZB-R suitable for PWM load switch applications
30V N Channel MOSFET power transistor ASDsemi ASDM3400ZB-R suitable for PWM load switch applications
Specifications
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.8A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
32mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
1.4V@250uA
Type :
N-Channel
Reverse Transfer Capacitance (Crss@Vds) :
77pF
Number :
1 N-channel
Output Capacitance(Coss) :
99pF
Input Capacitance(Ciss) :
823pF
Pd - Power Dissipation :
1.4W
Gate Charge(Qg) :
-
Description :
N-Channel 30V 5.8A 1.4W Surface Mount SOT-23-3
Mfr. Part # :
ASDM3400ZB-R
Model Number :
ASDM3400ZB-R
Package :
SOT-23-3
Description

Product Overview

The ASDM3400ZB is a 30V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It offers high power and current handling capabilities, making it suitable for PWM applications, load switches, and power management. This lead-free product is available in a surface mount SOT23-3 package.

Product Attributes

  • Brand: Ascend Semiconductor Co., Ltd.
  • Product Line: Ascend
  • Type: N-Channel MOSFET
  • Package: SOT23-3
  • Lead Free: Yes

Technical Specifications

Parameter Conditions Min Typ Max Units
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=250A 30 V
Gate Threshold Voltage (VGS(th)) VDS=VGS, ID=250A 0.7 1.1 1.4 V
Zero Gate Voltage Drain Current (IDSS) VDS=30V, VGS=0V 1 100 A
Gate-Body Leakage Current (IGSS) VDS=0V, VGS= 12V 100 nA
On state drain current (ID(ON)) VGS=4.5V, VDS=5V 30 A
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V, ID=5A 32 40 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=5.8A 29 32 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=5.8A (TJ=125C) 39 52 m
Forward Transconductance (gFS) VDS=5V, ID=5A 15 S
Diode Forward Voltage (VSD) IS=1A, VGS=0V 0.77 1 V
Maximum Body-Diode Continuous Current (IS) VGS=2.5V, ID=4A 30 A
Maximum Body-Diode Continuous Current (IS) VGS=4.5V, ID=5A 40 A
Input Capacitance (Ciss) VGS=0V, VDS=15V, f=1MHz 823 pF
Output Capacitance (Coss) VGS=0V, VDS=15V, f=1MHz 99 pF
Reverse Transfer Capacitance (Crss) VGS=0V, VDS=15V, f=1MHz 77 pF
Gate resistance (Rg) VGS=0V, VDS=0V, f=1MHz 2 6
Turn-On DelayTime (tD(on)) VGS=10V, VDS=15V, RL=2.6, RGEN=3 3.3 ns
Turn-On Rise Time (tr) VGS=10V, VDS=15V, RL=2.6, RGEN=3 4.8 ns
Turn-Off DelayTime (tD(off)) VGS=10V, VDS=15V, RL=2.6, RGEN=3 26.3 ns
Turn-Off Fall Time (tf) VGS=10V, VDS=15V, RL=2.6, RGEN=3 4.1 ns
Continuous Drain Current (ID) TA=25C 5.8 A
Continuous Drain Current (ID) TA=70C 4.9 A
Pulsed Drain Current (IDM) t 10s 30 A
Drain-Source Voltage (VDS) Absolute Maximum Rating 30 V
Gate-Source Voltage (VGS) Absolute Maximum Rating 12 V
Junction and Storage Temperature Range (TJ, TSTG) Absolute Maximum Rating -55 150 C
Power Dissipation (PD) TA=25C, Steady-State 1.4 W
Maximum Junction-to-Lead Thermal Resistance (RJL) Steady-State 0.9 C/W
Maximum Junction-to-Ambient Thermal Resistance (RJA) TA=25C 70 C/W
Maximum Junction-to-Ambient Thermal Resistance (RJA) TA=70C 100 C/W
Maximum Junction-to-Ambient Thermal Resistance (RJA) TA=70C (on 1in FR-4 board) 90 C/W

2410121841_ASDsemi-ASDM3400ZB-R_C2758232.pdf
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30V N Channel MOSFET power transistor ASDsemi ASDM3400ZB-R suitable for PWM load switch applications

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Product Detail
Drain to Source Voltage :
30V
Current - Continuous Drain(Id) :
5.8A
Operating Temperature - :
-55℃~+150℃
RDS(on) :
32mΩ@10V
Gate Threshold Voltage (Vgs(th)) :
1.4V@250uA
Type :
N-Channel
Contact Supplier
30V N Channel MOSFET power transistor ASDsemi ASDM3400ZB-R suitable for PWM load switch applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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